The Instability Characteristics of Amorphous Silicon Thin Film Transistors with Various Interfacial and Bulk Defect States

Abstract

Decays from highly ionized fluorine atoms obtained by beam-foil techniques are examined in the 670 eV to 1150 eV range. Transitions from the one-electron, two-electron and three-electron configurations are observed. In the H-like and He-like spectra the lines agree well with the known values, and the series limits were observed. The observed Lilike lines are compared with existing calculations and measurements. Two lines, at 800.6 eV and 813.2 eV, are observed but no good agreement is found with any existing calculations.

Characterization of Microcrystalline Silicon Thin Film Transistors Fabricated by Thermal Plasma Jet Crystallization Technique

“…Moreover, increasing demand for a backplane to drive organic electroluminescence diodes (OLEDs) stimulates much attention to materials that can replace a-Si:H, which has poor current stress stability. [1][2][3][4] In this regard, crystalline Si is a very attractive material. Therefore, the key technological issue is how to form crystalline Si films on glass substrates at a low temperature.…”