Characterization of Microcrystalline Silicon Thin Film Transistors Fabricated by Thermal Plasma Jet Crystallization Technique

Abstract

We study the covariant entropy bound in the context of gravitational collapse. First, we discuss critically the heuristic arguments advanced by Bousso. Then we solve the problem through an exact model: a Tolman-Bondi dust shell collapsing into a Schwarzschild black hole. After the collapse, a new black hole with a larger mass is formed. The horizon, L, of the old black hole then terminates at the singularity. We show that the entropy crossing L does not exceed a quarter of the area of the old horizon. Therefore, the covariant entropy bound is satisfied in this process.

Investigation of silicon grain structure and electrical characteristics of TFTs fabricated using different crystallized silicon films by atmospheric pressure micro-thermal-plasma-jet irradiation

“…In contrast, the SPC-Si film showed a lower crystalline volume fraction of 70% because the SPC-Si film is composed of microcrystalline grains with a typical size of ³20 nm. 16,17) The LWC-and HSLC-Si films were observed by EBSD in order to investigate the grain structure. GB and crystallographic orientation maps along the surface direction (SD) are shown in Fig.…”

“…16) TFTs formed on SPC-Si films show a field-effect mobility (® FE ) of ³10 cm 2 V ¹1 s ¹1 and a very small characteristic variation. 17) Moreover, we have applied micro-TPJ (µ-TPJ) with a high power density, which is achieved by reducing the TPJ nozzle diameter and increasing the arc gap, to crystallize a-Si films within a period of microseconds. 18) High-speed lateral crystallization (HSLC) is induced by moving a molten region (MR) at a very high speed of 4000 mm/s to form a lateral temperature gradient, which results in the growth of grains larger than 60 µm.…”

Influence of Grain Boundary Scattering on the Field-Effect Mobility of Solid-Phase Crystallized Hydrogenated Polycrystalline In2O3 (In2O3:H)

“…Although polycrystalline Oss, including In 2 O 3 , ZnO, and SnO 2 , have been investigated as channel materials in early oxide-based TFTs [ 23 , 24 , 25 ], they can easily create oxygen vacancies, leading to degenerate semiconductors. In addition, µ FE degradation due to grain boundary scattering is a serious issue for polycrystalline OSs as well as poly-Si [ 26 , 27 ]. Polycrystalline In 2 O 3 films have been investigated for use as the transparent conductive oxide (TCO) in solar cells.…”

Investigations on crack generation mechanism and crack reduction by buffer layer insertion in thermal-plasma-jet crystallization of amorphous silicon films on glass substrate

“…We have proposed the application of a thermal plasma jet (TPJ) with an atmospheric pressure DC arc discharge to the crystallization of a-Si films. [16][17][18][19] One can perform very low cost crystallization because of the very simple structure and high throughput. We have reported that the crystallization within milliseconds is induced by TPJ irradiation onto a-Si films on glass substrates, and high-electron-mobility TFTs are successfully fabricated on glass substrates.…”