The Integrated Emitter Turn-Off Thyristor (IETO)—An Innovative Thyristor-Based High Power Semiconductor Device Using MOS Assisted Turn-Off

Bragard, Michael; Conrad, Marcus; Hoek, Hauke van; Doncker, Rik W. De

doi:10.1109/tia.2011.2161432

Cited by 12 publications

(2 citation statements)

References 8 publications

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“…As the turn-off loss usually accounts for a large portion in the total power losses, modern efforts have been made to optimize the turn-off process, most noticeably the silicon integrated gate-commutated thyristor (IGCT), emitter turn-off (ETO) technology, and anode-shorted structure. Both IGCT and ETO technologies significantly improve the dynamic performance of the Si GTO by packaging the MOSFETs into the gate of thyristors to achieve a less complex controllable driver [24][25][26][27]. However, the external or packaged MOSFETs bring extra costs, power losses and even some reliability concerns in SiC GTOs.…”

Section: Introductionmentioning

confidence: 99%

Investigation on 4H-SiC gate turn-off thyristor with direct carrier extraction access to drift region for power conversion applications

Liang

Wang

Fang

et al. 2020

Semicond. Sci. Technol.

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4H-SiC gate turn-off (GTO) thyristor offers extraordinary advantages over its counterparts in handling ultra-high voltage electric power conversion applications because of its relatively low forward voltage drop at high conduction current density. Besides, though the SiC thyristors never suffer from long carrier liftime induced large switching loss like Si thyristors, the peak temperature rise rather than dynamic avalanche breakdown is blamed for the safe operation area (SOA) failure, making further reduction of power loss in SiC GTOs even more important. In this paper, a 20 kV SiC GTO with direct carrier extraction access to its drift region (DA-GTO) is investigated to explore the benefit this structure could bring for SiC thyristors, namely achieving smaller switching loss and/or potential larger SOA with slight sacrifice in forward voltage drop at high current. The structure is formed by interleaved P + ion implantation into part of the thin N-injector layer based on conventional 20 kV SiC GTO. The SiC DA-GTO operates in BJT mode at low current, and in GTO mode with low forward voltage drop at high current. During turn-off process, it offers a direct current path to quickly sweep out the excess carriers in the P-drift region, thus speeds up the turn-off process and decreases the turn-off loss. Simulation results show that its turn-off loss reduces by 37.4%, contributing to 12.6% reduction in total power loss, compared with SiC GTO. Therefore, SiC DA-GTO is a very promising choice for next-generation power conversion systems.

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Section: Introductionmentioning

confidence: 99%

Investigation on 4H-SiC gate turn-off thyristor with direct carrier extraction access to drift region for power conversion applications

Liang

Wang

Fang

et al. 2020

Semicond. Sci. Technol.

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“…Hence, this technique is thought to be especially beneficial for hybrid switches that consist of several semiconductor chips, as for example the Integrated Emitter Turn-Off thyristor [6], or the Internally Commutated Thyristor [7].…”

Section: Introductionmentioning

confidence: 99%

Packaging for power semiconductors based on the 3D printing technology Selective Laser Melting

Conrad

Doncker

Schniedenharn

et al. 2014

2014 16th European Conference on Power Electronics and Applications

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In this paper a new packaging technique based on Selective Laser Melting is presented which tries to replace solder or sinter layers, respectively bond wires. Following the intended contact geometry and concept, simulations show the influence of the contact geometry on the thermo-mechanical stress the device is committed to. First investigations on the constraints of the production process are represented. Finally the feasibility of the proposed packaging technique is shown.

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Compact high temperature package with smart size optimized gate drive unit for assembling the Dual-ICT

Butschen

Wang

Kaymak

et al. 2012

2012 IEEE Energy Conversion Congress and Exposition (ECCE)

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The Integrated Emitter Turn-Off Thyristor (IETO)—An Innovative Thyristor-Based High Power Semiconductor Device Using MOS Assisted Turn-Off

Cited by 12 publications

References 8 publications

Investigation on 4H-SiC gate turn-off thyristor with direct carrier extraction access to drift region for power conversion applications

Investigation on 4H-SiC gate turn-off thyristor with direct carrier extraction access to drift region for power conversion applications

Packaging for power semiconductors based on the 3D printing technology Selective Laser Melting

Compact high temperature package with smart size optimized gate drive unit for assembling the Dual-ICT

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