The Interaction of Impurity Oxygen with Radiation Defects in Silicon Crystal

Yeritsyan, Hrant N.; Sahakyan, Aram A.; Grigoryan, N. E.; Hakhverdyan, Eleonora A.; Harutyunyan, V. V.; Hovhannisyan, Agasi S.; Sahakyan, Vahan A.; Khachatryan, A. A.; Grigoryan, Bagrat; Hakobyan, Laura S.; Amatuni, G.; Vardanyan, A.; Tsakanov, V.

doi:10.4236/jmp.2015.614211

Cited by 1 publication

(1 citation statement)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In this case, the dose dependence behavior can been seen to differ from that in Figure 1, which may be explained in terms of the very great difference in the timescales over which the electron beam has been applied. In the case of the ultrafast pulse, a cluster which consists of A-centre (VO) type radiation defects is induced in the silicon crystal, despite the lower irradiation energy for cluster formation [9].…”

Section: Discussionmentioning

confidence: 99%

Quasi-Chemical Reactions in Irradiated Silicon Crystals with Regard to Ultrafast Irradiation

Yeritsyan¹,

Sahakyan²,

Grigoryan³

et al. 2018

JMP

Self Cite

View full text Add to dashboard Cite

This paper reports results from an investigation of the interaction of displaced Si-self atoms (I) and their vacancies (V), with impurities in crystalline silicon (Si), as induced by micro-second pulse duration irradiation with electrons at different energies: 3.5, 14, 25 and 50 MeV and pico-second pulse duration with energy 3.5 MeV. V-V, I-impurity atom and V-impurity atom interactions are analyzed both experimentally and as modeled using computer simulations. A process of divacancy (V 2) accumulation in the dose-dependent linear region is investigated. The effect of impurities on recombination of correlated divacancies, and I-atoms that had become displaced from regular lattice points is estimated by computer modeling of an appropriate diffusion-controlled process. It is concluded that the experimental results can be interpreted quantitatively in terms of a strongly anisotropic quasi-one-dimensional diffusion of displaced I-atoms. In addition, a significant difference is found between the effects of pico-second duration electron beam irradiation, which causes the formation of A-centre (V + Oxygen) clusters, while when the beam is applied on a micro-second timescale, divacancies are created instead, although the electrons have the same energy in both cases.

show abstract

Section: Discussionmentioning

confidence: 99%