The interaction of Pr ₂ O ₃ with 4H‐SiC(0001) surface

Abstract

PACS 77.55+f, 77.84.Bw, 79.60.Jv Praseodymium oxide (Pr 2 O 3 ) as a hetero-oxide on SiC(0001) represents a promising semiconductor / high-K dielectric material combination. We prepared thin films (<3 nm) of Pr 2 O 3 on 4H-SiC(0001) surfaces by a wet chemical process involving aqueous solutions of Pr(NO 3 ) 3 . Synchrotron radiation photoelectron spectroscopy (SR-PES) is used to study the chemical composition of these films after deposition and annealing in 300-900 °C range. The Si2p and C1s core level emissions are analysed in detail and reveal that praseodymium-silicate is formed at the interface. Our data are compared to corresponding studies of the Pr 2 O 3 interaction with Si(001) surfaces.

Characterization of crystalline rare-earth oxide high-K dielectrics grown by molecular beam epitaxy on silicon carbide

“…26 The Gd 2 O 3 growth was started on such reconstructed surfaces covered by 1.4 monolayers ͑ML͒ of silicon. 29 Because of the 1.4 ML silicon present initially at the surface, we expect the same behavior in our experiments on 6H-SiC. 3͑a͒.…”

Growth and characterization of crystalline gadolinium oxide on silicon carbide for high- application

“…Similar behavior was observed for the growth of rareearth oxides on Si(001), where in the initial stage of growth a thin silicate-like interfacial layer is formed [10,11]. Such a silicate-like interface bonding configuration was also suggested for the growth of Pr 2 O 3 on 4H-SiC(0001) [26]. Because of the 1.4 ML silicon present initially at the surface, we expect the same behavior in our experiments on 6H-SiC.…”

Optimization of the AlON buffer layer for PrXOY/Si stacks

“…2,3 This reduces the electrical performance as represented by increased values of the leakage current and the interface state density ͑D it ͒. 1 Praseodymium oxide ͑Pr X O Y ͒ is one high-k material from the rare-earth-metal oxide group.…”