Growth and characterization of crystalline gadolinium oxide on silicon carbide for high- application

Physical characterization of post-deposition annealed metal-organic decomposed cerium oxide film spin-coated on 4H-silicon carbide

“…One approach to overcome this is to replace the relatively low-k nitrided-SiO 2 with a gate oxide with higher k value [1]. Numerous high-k gate oxides, such as Al 2 O 3 [21][22][23][24], La 2 O 3 [25], HfO 2 [26][27][28], Gd 2 O 3 [29], AlN [30], and ZnO [31], have been deposited on SiC substrate to reduce the electric field in the oxides.…”

Effect of oxygen on the electronic configuration of Gd2O3∕Ge heterojunctions

“…The 450°C thermal treatment in O 2 atmosphere is effective in reducing moisture penetration and, hence, the incorporation of OH − groups into the Gd 2 O 3 film. 8 The O 2 -rich state of this system is clearly metastable and implies serious concerns about the stability of these heterojunctions. 19 Subsequent vacuum annealing allows to remove the absorbed moisture and to restore the previous band lineup.…”

“…Therefore, several approaches can be directly adopted not only during the deposition process, but also as postdeposition treatments in order to tune the electronic structure of the junction. 8 Given the chemical and structural interface abruptness of the epitaxial Gd 2 O 3 films, 3 Gd 2 O 3 appears as a suitable model system to single out the effect of the oxygen related defects inside the oxide. 1,2 In this paper, we investigate this issue in an epitaxial Gd 2 O 3 / Ge system, focusing on the incidence of postdeposition annealing ͑PDA͒ processes in oxygen rich atmospheres on the electronic band offset of the heterojunction.…”

Growth and application of epitaxial heterostructures with polymorphous rare-earth oxides

“…Rare-earth oxides are also considered as a gate dielectric material [10][11][12] because of the combination of relatively wide bandgap and dielectric constant (subsequently, 5.9 eV and 14 for gadolinium oxide). Growth of Gd 2 O 3 on 6H-SiC leads to the formation of both monoclinic and cubic phases [11].…”

“…Growth of Gd 2 O 3 on 6H-SiC leads to the formation of both monoclinic and cubic phases [11]. Chang et al demonstrated growth of monoclinic Y 2 O 3 on c-plane of GaN [5].…”