Effect of oxygen on the electronic configuration of Gd2O3∕Ge heterojunctions

Perego, Michele; Molle, Alessandro; Fanciulli, M.

doi:10.1063/1.2838344

Cited by 16 publications

(10 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A strong oxygen 1s peak at 532.8 eV implied the oxygen existed in the O 2À oxidation state. 53 Clearly, on the basis of the composition and valence analysis, the as-prepared CGC 37 was composed of CuGeO 3 . To conrm the existence of graphene, the ne spectrum of C 1s from CGC 37 was examined (Fig.…”

Section: Resultsmentioning

confidence: 99%

CuGeO3 nanowires covered with graphene as anode materials of lithium ion batteries with enhanced reversible capacity and cyclic performance

Wang

et al. 2014

Nanoscale

View full text Add to dashboard Cite

A facile one-step route was developed to synthesize crystalline CuGeO₃ nanowire/graphene composites (CGCs). Crystalline CuGeO₃ nanowires were tightly covered and anchored by graphene sheets, forming a layered structure. Subsequently, CGCs were exploited as electrode materials for lithium ion batteries (LIBs). The reversible formation of Li₂O buffer layer and elastic graphene sheets accommodated the volume change during the charge and discharge processes. CGC containing 37 wt% graphene exhibited a superior electrochemical performance, that is, a remarkable reversible capacity (1265 mA h g(-1) for the first cycle), an outstanding cyclic performance (853 mA h g(-1) after 50 cycles under a current density of 200 mA g(-1)), a high coulombic efficiency, and an excellent rate capability. Clearly, CGCs may stand out as a promising anode material for LIBs.

show abstract

Section: Resultsmentioning

confidence: 99%

CuGeO3 nanowires covered with graphene as anode materials of lithium ion batteries with enhanced reversible capacity and cyclic performance

Wang

et al. 2014

Nanoscale

View full text Add to dashboard Cite

show abstract

“…As shown in the previous paragraph, our SIMS results showed that there were Zn-Si inter-diffusion at the ZnO/ SiO 2 interface of the as-grown samples and the interdiffusion would be significantly enhanced by thermal annealing. Studying the near-interfacial defects of oxide/ZnO interface, Wang et al 27 also showed that deep level defects were easily formed at the near-interfacial region, and it had the effect of enhancing the defect emission. In the present study, the 2.8 eV and the 3.0 eV peaks were only found in the E b ¼ 10 keV spectra, and were thus thought to be associated with defects located closer to the ZnO/SiO 2 interface.…”

Section: Resultsmentioning

confidence: 99%

Post-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering

Yang

et al. 2011

Journal of Applied Physics

View full text Add to dashboard Cite

Arsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method at a relatively low substrate temperature of 200 C. Post-growth annealing in air was carried out up to a temperature of 1000 C. The samples were characterized by Hall measurement, positron annihilation spectroscopy (PAS), secondary ion mass spectroscopy (SIMS), and cathodoluminescence (CL). The as-grown sample was of n-type and it converted to p-type material after the 400 C annealing. The resulting hole concentration was found to increase with annealing temperature and reached a maximum of 6 Â 10 17 cm À3 at the annealing temperature of 600 C. The origin of the p-type conductivity was consistent with the As Zn (V Zn) 2 shallow acceptor model. Further increasing the annealing temperature would decrease the hole concentration of the samples finally converted the sample back to n-type. With evidence, it was suggested that the removal of the p-type conductivity was due to the dissociation of the As Zn (V Zn) 2 acceptor and the creation of the deep level defect giving rise to the green luminescence. V

show abstract

“…Though indirectly, this result affirms the high sensitivity of the GeO 2 IL to the presence of a particular chemical agent. 17,18 Therefore, the effect of La may be associated with formation of the LaGeO x compound, 11 in which the formation of Ge sub-oxide of a certain kind is suppressed.…”

mentioning

confidence: 98%

Beneficial effect of La on band offsets in Ge/high-κ insulator structures with GeO2 and La2O3 interlayers

Afanasʼev

Stesmans

Mavrou

2008

Applied Physics Letters

View full text Add to dashboard Cite

The electron energy band alignment between (100)Ge and high-κ oxide insulators (ZrO2,Gd2O3,La2Hf2O7) grown by the atomic beam deposition method is analyzed using photoemission of electrons from the Ge valence band. Formation of a thin GeO2 passivation layer before the high-κ deposition is found to significantly reduce the barrier for electrons. However, when La2O3 is deposited as an interlayer, it strongly reacts with the Ge substrate to form a La–Ge–O germanate at the interface, which is found to retain a high barrier for the carriers in Ge.

show abstract

Effect of oxygen on the electronic configuration of Gd2O3∕Ge heterojunctions

Cited by 16 publications

References 17 publications

CuGeO3 nanowires covered with graphene as anode materials of lithium ion batteries with enhanced reversible capacity and cyclic performance

CuGeO3 nanowires covered with graphene as anode materials of lithium ion batteries with enhanced reversible capacity and cyclic performance

Post-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering

Beneficial effect of La on band offsets in Ge/high-κ insulator structures with GeO2 and La2O3 interlayers

Contact Info

Product

Resources

About