Growth and application of epitaxial heterostructures with polymorphous rare-earth oxides

Epitaxial Si and Gd2O3 Heterostructures - Distributed Bragg Reflectors with Stress Management Function for GaN on Si Light Emitting Devices

“…Whilst substrate removal can be used, an alternative solution -single integrated wafer with the reflecting buffer and GaN could be an attractive approach. Rare earth oxides are already proved to be suitable as a template buffer layer for silicon on insulator and germanium on insulator structures [1,2] due their excellent crystal and chemical stability at typical processing temperatures.…”