The Interface and Mechanical Properties of a CVD Single Crystal Diamond Produced by Multilayered Nitrogen Doping Epitaxial Growth

Yun, Zhao; Li, Chengming; Liu, Jinlong; An, Kang; Yan, Xiongbo; Hei, L.F.; Chen, Liangxian; Wei, Junjun; Lü, Fang

doi:10.3390/ma12152492

Cited by 10 publications

(4 citation statements)

References 38 publications

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“…For these samples, separating the difference in negative ion yield due to the influence of the crystal face or the nitrogen content in the diamond is not possible because of the interrelated nature the presence of nitrogen in the gas phase has with the crystal face orientation and the measurable number of nitrogen vacancy centres. This is an active area of research [71]. However for this study, as nitrogen doping is the main influencing factor that generates the differences between the samples, it is reasonable to suggest that it is possible to associate the nitrogen gas phase doping with the negative ion yield and this is how the samples will be defined in the next section.…”

Section: Measurement Of the Relative Quantity Of Nitrogen Dop-mentioning

confidence: 99%

Enhancing surface production of negative ions using nitrogen doped diamond in a deuterium plasma

Smith

Ellis

Moussaoui

et al. 2020

J. Phys. D: Appl. Phys.

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The production of negative ions is of significant interest for applications including mass spectrometry, particle acceleration, material surface processing, and neutral beam injection for magnetic confinement fusion. Methods to improve the efficiency of the surface production of negative ions, without the use of low work function metals, are of interest for mitigating the complex engineering challenges these materials introduce. In this study we investigate the production of negative ions by doping diamond with nitrogen. Negatively biased (−20 V or −130 V), nitrogen doped micro-crystalline diamond films are introduced to a low pressure deuterium plasma (helicon source operated in capacitive mode, 2 Pa, 26 W) and negative ion energy distribution functions (NIEDFs) are measured via mass spectrometry with respect to the surface temperature (30 • C to 750 • C) and dopant concentration. The results suggest that nitrogen doping has little influence on the yield when the sample is biased at −130 V, but when a relatively small bias voltage of −20 V is applied the yield is increased by a factor of 2 above that of un-doped diamond when its temperature reaches 550 • C. The doping of diamond with nitrogen is a new method for controlling the surface production of negative ions, which continues to be of significant interest for a wide variety of practical applications.

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Section: Measurement Of the Relative Quantity Of Nitrogen Dop-mentioning

confidence: 99%

Enhancing surface production of negative ions using nitrogen doped diamond in a deuterium plasma

Smith

Ellis

Moussaoui

et al. 2020

J. Phys. D: Appl. Phys.

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“…In situ doping via chemical vapour deposition (CVD) is a common method to improve the electrical conductivity of intrinsic semiconductors and allow its application in various fields, such as diamond, ZnO, TiO 2 , etc. [7][8][9]. In recent decades, a great deal of work has been focused on the preparation of N-doped SiC by adding NH 3 [5,10] or N 2 [11,12] during CVD, achieving σ values from 0.1 to 10 3 S/m.…”

Section: Introductionmentioning

confidence: 99%

In Situ Doping of Nitrogen in <110>-Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition

Lai

Xia

et al. 2020

Materials

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Doping of nitrogen is a promising approach to improve the electrical conductivity of 3C-SiC and allow its application in various fields. N-doped, <110>-oriented 3C-SiC bulks with different doping concentrations were prepared via halide laser chemical vapour deposition (HLCVD) using tetrachlorosilane (SiCl4) and methane (CH4) as precursors, along with nitrogen (N2) as a dopant. We investigated the effect of the volume fraction of nitrogen (ϕN2) on the preferred orientation, microstructure, electrical conductivity (σ), deposition rate (Rdep), and optical transmittance. The preference of 3C-SiC for the <110> orientation increased with increasing ϕN2. The σ value of the N-doped 3C-SiC bulk substrates first increased and then decreased with increasing ϕN2, reaching a maximum value of 7.4 × 102 S/m at ϕN2 = 20%. Rdep showed its highest value (3000 μm/h) for the undoped sample and decreased with increasing ϕN2, reaching 1437 μm/h at ϕN2 = 30%. The transmittance of the N-doped 3C-SiC bulks decreased with ϕN2 and showed a declining trend at wavelengths longer than 1000 nm. Compared with the previously prepared <111>-oriented N-doped 3C-SiC, the high-speed preparation of <110>-oriented N-doped 3C-SiC bulks further broadens its application field.

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“…By substituting the [CH 3 ] and [H] data in figures 3(c) and (d), we can find that the calculated growth rate which is showed in figure 5(a) is quite consistent with the measured data, which illustrates that the methyl concentration near the substrate is the main factor affecting the growth rate when the concentration of atomic hydrogen does not change greatly or is fixed. Due to the intrinsic stress within the film, figure 5(b) shows that the Raman peak position of all samples have shifted to right, about at the position of around 1334 cm −1 [49]. Regarding the crystal quality characterization, it can be seen from figure 5(c) that the FWHM of the Raman spectra is positively correlated with the growth rate of diamond.…”

Section: Resultsmentioning

confidence: 95%

An innovative gas inlet design in a microwave plasma chemical vapor deposition chamber for high-quality, high-speed, and high-efficiency diamond growth

Zhao

Teng

Tang

et al. 2023

J. Phys. D: Appl. Phys.

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A novel design of the gas inlet system in a diamond microwave plasma chemical vapor deposition growth chamber has been reported in this paper. The design is targeting for high-quality, high-speed, and high-efficiency diamond material fabrication. By introducing a gas inlet hole into the susceptor, we expand the ways of gas introduction for diamond growth. After extensive numerical and experimental investigation, we have found that the introduction of methane and doping gas inlet from the hole of below while the hydrogen from the top is feasible for realizing the target. The growth and doping species could be confined around the substrate, making efficient usage of the precursors. The plasma state change caused by the difference of the gas inlet modes has been ascribed to the resulted gas distribution in the chamber. The measured growth rate has been increased to 32 μm/h, which is 16 times higher than traditional gas inlet configuration. Meanwhile, a large improvement of the nitrogen doping concentration has been achieved. Besides, with the increase of growth rate and nitrogen incorporation efficiency, the crystal quality and surface morphology keep in an acceptable degree. In this mode, the dual gas flow system can perfectly solve the contradiction among the crystal quality, growth rate, and doping efficiency, commonly existing during the material fabrication process, the chamber contamination could be significantly suppressed due to the constrained distribution of methyl and doping species, making the fabrication cost much lower. The results of repetitive experiments indicate that other residual impurities present in the chamber of MPCVD could likely regulate the threshold concentration of nitrogen required for accelerating the growth rate during the nitrogen doped diamond growth, which have a significant effect on the diamond growth.

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The Interface and Mechanical Properties of a CVD Single Crystal Diamond Produced by Multilayered Nitrogen Doping Epitaxial Growth

Cited by 10 publications

References 38 publications

Enhancing surface production of negative ions using nitrogen doped diamond in a deuterium plasma

Enhancing surface production of negative ions using nitrogen doped diamond in a deuterium plasma

In Situ Doping of Nitrogen in <110>-Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition

An innovative gas inlet design in a microwave plasma chemical vapor deposition chamber for high-quality, high-speed, and high-efficiency diamond growth

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