The interface microscopy and spectroscopy on the cleavage surfaces of the In4Se3 pure and copper-intercalated layered crystals

Galiy, P.V.; Musyanovych, Anna; Fiyala, Ya.

doi:10.1016/j.physe.2006.06.003

Cited by 20 publications

(14 citation statements)

References 5 publications

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“…Thus, the intercalating Cu atoms are easy to ionize and act as donors. Therefore, it is more rational for Cu to intercalate the lattice and occupy an intercalating site, which is also consistent with Galy's report …”

Section: Carrier Concentration Ne and Hall Mobility μH Of All The Sasupporting

confidence: 88%

Enhancement of the Thermoelectric Performance of Polycrystalline In₄Se_2.5 by Copper Intercalation and Bromine Substitution

Luo

Liu

et al. 2013

Advanced Energy Materials

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Section: Carrier Concentration Ne and Hall Mobility μH Of All The Sasupporting

confidence: 88%

Enhancement of the Thermoelectric Performance of Polycrystalline In₄Se_2.5 by Copper Intercalation and Bromine Substitution

Luo

Liu

et al. 2013

Advanced Energy Materials

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“…In order to achieve high power factor, selective charge localization of electron or hole is essential because the electron-hole mixing gives rise to Seebeck coefficient compensation. As a candidate material of quasi 1D systems, In 4 Se 3 is very promising because it has natural nanowire-like cylindrical clusters and quasi-one-dimensional Indium chains at the cleavage (100) surface from the scanning tunneling microscopy (STM) measurements [16,17,18]. The In 4 Se 3 has a layered crystal structure of (In 3 ) 5+ clusters covalently bonded to Se ions in the bc -planes held together by van der Waals interactions along the a -axis.…”

Section: Resultsmentioning

confidence: 99%

Chemical Potential Tuning and Enhancement of Thermoelectric Properties in Indium Selenides

Rhyee

Kim

2015

Materials

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Researchers have long been searching for the materials to enhance thermoelectric performance in terms of nano scale approach in order to realize phonon-glass-electron-crystal and quantum confinement effects. Peierls distortion can be a pathway to enhance thermoelectric figure-of-merit ZT by employing natural nano-wire-like electronic and thermal transport. The phonon-softening known as Kohn anomaly, and Peierls lattice distortion decrease phonon energy and increase phonon scattering, respectively, and, as a result, they lower thermal conductivity. The quasi-one-dimensional electrical transport from anisotropic band structure ensures high Seebeck coefficient in Indium Selenide. The routes for high ZT materials development of In4Se3−δ are discussed from quasi-one-dimensional property and electronic band structure calculation to materials synthesis, crystal growth, and their thermoelectric properties investigations. The thermoelectric properties of In4Se3−δ can be enhanced by electron doping, as suggested from the Boltzmann transport calculation. Regarding the enhancement of chemical potential, the chlorine doped In4Se3−δCl0.03 compound exhibits high ZT over a wide temperature range and shows state-of-the-art thermoelectric performance of ZT = 1.53 at 450 °C as an n-type material. It was proven that multiple elements doping can enhance chemical potential further. Here, we discuss the recent progress on the enhancement of thermoelectric properties in Indium Selenides by increasing chemical potential.

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“…However, as shown in the high angle XRD patterns, the peaks shift to lower diffraction angle direction with increasing the content of Cu. This can be attributed to the lattice expansion induced by some solubility for Cu atoms in In 4 Se 3 crystal, and Cu atoms may insert into the interlayer space of In 4 Se 3 crystal …”

Section: Resultsmentioning

confidence: 99%

Improvement of Thermoelectric Properties of In₄Se₃ Bulk Materials with Cu Nanoinclusions

Yang

Xiao

et al. 2013

J. Am. Ceram. Soc.

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In 4 Se 3 bulk materials with Cu nanoinclusions, which were introduced by thermal decomposition of Cu(OAc) 2 , were prepared by mechanical alloying and subsequent hot-press process. Effect of Cu nanoparticles content on the microstructure and thermoelectric properties of the composites were investigated in detail. It shows that Cu particles are about 30 nm in size and distribute homogeneously in the In 4 Se 3 matrix when the content of Cu(OAc) 2 is not more than 0.3 wt%. The thermal conductivities of the composites were greatly reduced due to the enhanced phonon scattering by nanoinclusions, and their power factors were also enhanced with addition of Cu nanoinclusions. A maximum ZT of 0.97 at 723 K was obtained when the addition content of Cu(OAc) 2 was 0.3 wt%

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The interface microscopy and spectroscopy on the cleavage surfaces of the In4Se3 pure and copper-intercalated layered crystals

Cited by 20 publications

References 5 publications

Enhancement of the Thermoelectric Performance of Polycrystalline In₄Se_2.5 by Copper Intercalation and Bromine Substitution

Enhancement of the Thermoelectric Performance of Polycrystalline In₄Se_2.5 by Copper Intercalation and Bromine Substitution

Chemical Potential Tuning and Enhancement of Thermoelectric Properties in Indium Selenides

Improvement of Thermoelectric Properties of In₄Se₃ Bulk Materials with Cu Nanoinclusions

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The interface microscopy and spectroscopy on the cleavage surfaces of the In4Se3 pure and copper-intercalated layered crystals

Cited by 20 publications

References 5 publications

Enhancement of the Thermoelectric Performance of Polycrystalline In4Se2.5 by Copper Intercalation and Bromine Substitution

Enhancement of the Thermoelectric Performance of Polycrystalline In4Se2.5 by Copper Intercalation and Bromine Substitution

Chemical Potential Tuning and Enhancement of Thermoelectric Properties in Indium Selenides

Improvement of Thermoelectric Properties of In4Se3 Bulk Materials with Cu Nanoinclusions

Contact Info

Product

Resources

About

Enhancement of the Thermoelectric Performance of Polycrystalline In₄Se_2.5 by Copper Intercalation and Bromine Substitution

Enhancement of the Thermoelectric Performance of Polycrystalline In₄Se_2.5 by Copper Intercalation and Bromine Substitution

Improvement of Thermoelectric Properties of In₄Se₃ Bulk Materials with Cu Nanoinclusions