The ordered (100) surface of layered In4Se3 single crystals is characterized by semiconducting quasi-one-dimensional indium (In) chains. A band with significant dispersion in the plane of the surface is observed near the valence band maximum. The band exhibits an anisotropic dispersion with ∼1eV band width along the In chain direction. The dispersion of this band is largely due to the hybridization of In-s and Se-p orbitals, but the hybridization between In-s and Se-p and In-p and Se-p orbitals is also critical in establishing the band gap.

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Liu, Jing; Losovyj, Yaroslav B.; Komesu, Takashi; Dowben, Peter A.; Makinistian, L.; Albinesi, E. A.; Petukhov, A. G.; Galiy, P.; and Fiyala, Ya., "The bulk band structure and inner potential of layered In 4 Se 3 " (2008). Peter Dowben Publications. 203.

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