The internal stress in thin silver, copper and gold films

Abermann, R.; Koch, R.

doi:10.1016/0040-6090(85)90096-3

Cited by 160 publications

(79 citation statements)

References 11 publications

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“…The sign of the slope of the stress-thickness product curve as a function of the film thickness gives the sign of the stress where, by convention, negative values signify compressive stress and positive values signify tensile stress. For films grown under high mobility conditions (encountered when depositing Ag at room temperature) a compressive-tensilecompressive stress evolution is commonly observed upon film thickening [22][23][24][25][26]. It has been shown [25,26] that the tensile-to-compressive transition coincides with the completion of the coalescence and the formation of a continuous film.…”

Section: Study Of Film Nucleation and Coalescencementioning

confidence: 99%

Time-domain and energetic bombardment effects on the nucleation and coalescence of thin metal films on amorphous substrates

Magnfält¹,

Elofsson²,

Abadias³

et al. 2013

J. Phys. D: Appl. Phys.

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Section: Study Of Film Nucleation and Coalescencementioning

confidence: 99%

Time-domain and energetic bombardment effects on the nucleation and coalescence of thin metal films on amorphous substrates

Magnfält¹,

Elofsson²,

Abadias³

et al. 2013

J. Phys. D: Appl. Phys.

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“…Previous work has shown that a complex evolution of the film stress is associated with V-W growth [1][2][3][4][5]. It is only now becoming widely appreciated that this behavior arises from a dynamic interplay between different stress generation mechanisms, coupled with a variety of possible mechanisms for stress relaxation.…”

Section: Introductionmentioning

confidence: 99%

The dynamic competition between stress generation and relaxation mechanisms during coalescence of Volmer–Weber thin films

Floro

Hearne

Hunter

et al. 2001

Journal of Applied Physics

343

206

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Real-time measurements of stress evolution during the deposition of VolmerWeber thin films reveal a complex interplay between mechanisms for stress generation and stress relaxation. We observed a generic stress evolution from compressive to tensile, then back to compressive stress as the film thickened, in amorphous and polycrystalline Ge and Si, as well as in polycrystall;ne Ag, Al, and Ti. Direct measurements of stress relaxation during growth interrupts demonstrate that the generic behavior can occur even in the absence of stress relaxation. When relaxation did occur, the mechanism depended sensitively on whether the film was continuous or discontinuous, on the process conditions, and on the fildsubstrate interracial strength.For Ag films, interracial shear dominated the early relaxation behnavior, whereas this mechanism was negligible in Al films due to the much stronger bonding at the A1/SiOz interface. For amorphous Ge, selective relaxation of tensile stress was observed only at elevated temperatures, consistent with surface-diffusion-based mechanisms. In "all the films studied here, stress relaxation was suppressed after the films became continuous...

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“…Polycrystalline films grow through the Volmer-Weber mechanism in which isolated single-crystal islands nucleate on the surface of the substrate and then grow to coalesce and form a continuous film. Many studies of stress evolution during this process have been carried out [1][2][3]. When films are grown under conditions of high atomic mobility, the general behavior is as indicated in Fig.…”

mentioning

confidence: 99%

Direct Evidence for Effects of Grain Structure on Reversible Compressive Deposition Stresses in Polycrystalline Gold Films

2009

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A component of the compressive stress that develops during deposition of polycrystalline thin films reversibly changes during interruptions of growth. The mechanism responsible for this phenomenon has been the subject of much recent speculation and experimental work. In this Letter, we have varied the inplane grain size of columnar polycrystalline gold films with a fixed thickness, by varying their thermal history. Without a vacuum break, the stress in these films was then measured in situ during growth and during interruptions in growth. Homoepitaxial gold films were similarly characterized as part of this study. The inverse of the in-plane grain size and the corresponding reversible stress change were found to be proportional, with zero reversible stress change observed for infinite grain size (homoepitaxial films). These results demonstrate a clear role of grain size in the reversible changes in gold films.

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The internal stress in thin silver, copper and gold films

Cited by 160 publications

References 11 publications

Time-domain and energetic bombardment effects on the nucleation and coalescence of thin metal films on amorphous substrates

Time-domain and energetic bombardment effects on the nucleation and coalescence of thin metal films on amorphous substrates

The dynamic competition between stress generation and relaxation mechanisms during coalescence of Volmer–Weber thin films

Direct Evidence for Effects of Grain Structure on Reversible Compressive Deposition Stresses in Polycrystalline Gold Films

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