The investigation of phosphorus diffusion in evacuated, sealed tubes using tracer methods

Fränz, I.; Langheinrich, W.

doi:10.1016/s0038-1101(71)80009-6

Cited by 9 publications

(1 citation statement)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Thus, PECVD BSG emitters can be produced with a silicon nitride capping layer. Also, the capping layer works as a diffusion barrier and prevents a compensating in-diffusion of phosphorus into the silicon substrate, see also [62][63][64][65][66].…”

Section: Pecvd Bsg Emitter With Sin X :H Capping Layermentioning

confidence: 99%

A 3‐in‐1 doping process for interdigitated back contact solar cells exploiting the understanding of co‐diffused dopant profiles by use of PECVD borosilicate glass in a phosphorus diffusion

Gloger

Herguth

Engelhardt

et al. 2016

Progress in Photovoltaics

View full text Add to dashboard Cite

Boron and phosphorus doping of crystalline silicon using a borosilicate glass (BSG) layer from plasma enhanced chemical vapor deposition (PECVD) and phosphorus oxychloride diffusion, respectively, is investigated. More specifically, the si multaneous and interacting diffusion of both elements through the BSG layer into the silicon substrate is characterized in depth. We show that an overlying BSG layer does not prevent the formation of a phosphorus emitter in silicon substrates during phosphorus diffusion. In fact, a BSG layer can even enhance the uptake of phosphorus into a silicon substrate com pared with a bare substrate.From the understanding of the joint diffusion of boron and phosphorus through a BSG layer into a silicon substrate, a model is developed to illustrate the correlation of the concentration dependent diffusivities and the emerging diffusion pro files of boron and phosphorus. Here, the in diffusion of the dopants during diverse doping processes is reproduced by the use of known concentration dependences of the diffusivities in an integrated model. The simulated processes include a BSG drive in step in an inert and in a phosphorus containing atmosphere.Based on these findings, a PECVD BSG/capping layer structure is developed, which forms three different n ++ , n + and p + doped regions during one single high temperature process. Such engineered structure can be used to produce back contact solar cells.

show abstract

Section: Pecvd Bsg Emitter With Sin X :H Capping Layermentioning

confidence: 99%