The investigation of the electrical characteristics and photo-response properties of the Al/(CMAT)/p-Si structures

Sevgili, Ömer

doi:10.1016/j.solidstatesciences.2021.106635

Cited by 11 publications

(9 citation statements)

References 68 publications

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“…The following power law gives this linear relation 27–29 :

I_{ph} goodbreak= {BP}^{n},

where n is an exponent and B is a constant. The value of n was derived from the slope of ln( I ph )–ln( P ) curve for various applied bias voltage (0.0, −0.1, −0.2, −0.3, and −0.4 V), and it changed from 1.473 and 1.644, which indicated a lower density of the unoccupied interface traps 30–32 …”

Section: Resultsmentioning

confidence: 99%

The illumination effects on the current conduction mechanisms of the Au/(Er₂O₃:PVC)/n‐Si (MPS) Schottky diodes

Altındal

Azizian‐Kalandaragh

Ulusoy

et al. 2022

J of Applied Polymer Sci

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Photoresponse of the Au/(Er2O3:PVC)/n‐Si diode was executed in a wide range of illumination intensity (P). Its basic electrical parameters such as ideality factor (n), barrier height (ΦB0), series and shunt resistances (Rs, Rsh), photocurrent (Iph), energy‐dependence of interface states (Nss), and photosensitivity (S) were calculated from the results of the current–voltage (I–V) measurements. At the negative‐bias region, an increase in Iph is observed due to the e−‐h+ pairs that occur as a result of increasing P and their drift in opposite directions under the internal electric field. The ln(Iph)–ln(P) plot shows a good linear behavior under various applied voltages. Their slopes vary from 1.47 to 1.64, indicating that empty trap levels, that is, levels not occupied by charges, are of low density. The values n, ΦB0, and Rs were obtained using the thermionic emission theory, Cheung, and Norde functions. The value of ΦB0 decreases with increasing n and P as linearly with ΦB0(n) = (−0.143n + 1.118) eV and ΦB0(P) = (−2 × 10−4P + 0.831) eV, respectively. This illumination coefficient of ΦB0 (=−2 × 10−4 eV/[mW/cm2]) is close to the temperature coefficient bandgap of Si (=−4.73 × 10−4 eV/K). These results show that the performed Au/(Er2O3:PVC)/n‐Si diode has excellent photo‐response and can be successfully used in photovoltaic applications instead of conventional metal–semiconductor diodes.

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“…The following power law gives this linear relation 27–29 :

I_{ph} goodbreak= {BP}^{n},

Section: Resultsmentioning

confidence: 99%

The illumination effects on the current conduction mechanisms of the Au/(Er₂O₃:PVC)/n‐Si (MPS) Schottky diodes

Altındal

Azizian‐Kalandaragh

Ulusoy

et al. 2022

J of Applied Polymer Sci

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“…For devices such light-emitting diodes and highly efficient solar cells, CMAT is an outstanding surface passivation property on crystalline semiconductors [1]. Due to the high dielectric CMAT interlayer's excellent dielectric properties, good adhesion to numerous surfaces, and thermal and chemical stability, it was possible to obtain a lower value of N ss for it compared to a conventional insulator like SiO 2 by using conventional methods like thermal/wet oxidation.…”

Section: Resultsmentioning

confidence: 99%

“…Finally, same high-pure Al with 150 nm thickness and 7.85 × 10 −3 cm 2 area was also thermally evaporated onto CMAT interlayer as Schottky or rectifier contacts using a shadow mask. More detailed information on the fabrication processes, Atomic Force Microscope (AFM), electrical measured system, and schematic design of the Al/(CMAT)/p-Si SDs can be found in our previous work [1]. Frequency-dependent C-V and G/ω-V measurements were performed using the HP41912 A LF impedance-analyzer (5Hz-13 MHz.…”

Section: Methodsmentioning

confidence: 99%

“…These techniques are also currently not cost-effective. These structures quality/performance, as well as their departure from the ideal situation, are often influenced by the number of traps (D it ), the homogeneity of the interfacial layer, as well as its permittivity, thickness, and series resistance (R s ) [1][2][3][4][5]. Researchers continue to face difficulties in fully describing conduction mechanisms (CMs), barrier/interlayer homogeneity, and the improvement of the performance of these devices.…”

Section: Introductionmentioning

confidence: 99%

“…In our previous study [1], the effect of the CMAT interlayer on electrical and photo-response properties of the fabricated Al/(CMAT)/p-Si SDs have been investigated in dark and under various illumination intensities. The density of N ss located at interlayer/p-Si interface, their lifetimes (τ) and the series resistance (R s ) of the structure all have a significant role in the quality and performance of the MS or MIS device as well as in deviating the device from the ideal state [13][14][15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

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The capacitance/conductance and surface state intensity characteristics of the Al/(CMAT)/p-Si structures

Çetinkaya,

Bengi,

Sevgili

et al. 2024

Phys. Scr.

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To determine the Al/(CMAT)/p-Si structure's admittance analysis, capacitance/conductance versus frequency (C/G-V-f) data was obtained in the 3 kHz-3 MHz and -2/4V ranges at room temperature. From the Nicollian and Brews method, voltage-dependent spectra of Rs were derived for various frequencies. The parallel conductance and low-high frequency capacitance (CLF-CHF) techniques, respectively, were used to determine the voltage and frequency dependent spectra of Nss and their life time (τ). Surface states (Nss), which are identified by admittance measurements, emerge at the M/S interlayer as a result of high capacitance and conductance values at low frequencies. This can also be explained by the Nss's ability to track ac signals well at lower frequencies. The normalized parallel conductance versus frequency (Gp/ω-f) plot under various biases show a peak as a result of Nss existence. X-ray diffractometer (XRD) was used for structural investigation.

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On comparison of Au/n-Si (MS) Schottky diodes with and without (Brushite + Monetite: PVC) an interlayer grown by spin coating technique

Sevgili,

Şafak Asar,

Altındal

et al. 2024

Electr Eng

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The investigation of the electrical characteristics and photo-response properties of the Al/(CMAT)/p-Si structures

Cited by 11 publications

References 68 publications

The illumination effects on the current conduction mechanisms of the Au/(Er₂O₃:PVC)/n‐Si (MPS) Schottky diodes

The illumination effects on the current conduction mechanisms of the Au/(Er₂O₃:PVC)/n‐Si (MPS) Schottky diodes

The capacitance/conductance and surface state intensity characteristics of the Al/(CMAT)/p-Si structures

On comparison of Au/n-Si (MS) Schottky diodes with and without (Brushite + Monetite: PVC) an interlayer grown by spin coating technique

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The investigation of the electrical characteristics and photo-response properties of the Al/(CMAT)/p-Si structures

Cited by 11 publications

References 68 publications

The illumination effects on the current conduction mechanisms of the Au/(Er2O3:PVC)/n‐Si (MPS) Schottky diodes

The illumination effects on the current conduction mechanisms of the Au/(Er2O3:PVC)/n‐Si (MPS) Schottky diodes

The capacitance/conductance and surface state intensity characteristics of the Al/(CMAT)/p-Si structures

On comparison of Au/n-Si (MS) Schottky diodes with and without (Brushite + Monetite: PVC) an interlayer grown by spin coating technique

Contact Info

Product

Resources

About

The illumination effects on the current conduction mechanisms of the Au/(Er₂O₃:PVC)/n‐Si (MPS) Schottky diodes

The illumination effects on the current conduction mechanisms of the Au/(Er₂O₃:PVC)/n‐Si (MPS) Schottky diodes