The Investigation of the High-k Gd[sub 2]O[sub 3] (Gadolinium Oxide) Interdielectrics Deposited on the Polycrystalline Silicon

Kao, Chiang; Chen, Hsiang; Pan, Yu; Chiu, Jing Sing; Lin, Shih Po; Lai, Chao−Sung

doi:10.1149/1.3458865

Cited by 19 publications

(8 citation statements)

References 14 publications

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“…Furthermore, the ratios of Ln–O II /Ln–O I at the depth of 5 nm are larger than those on top surfaces for three Ln 2 O 3 (Ln = La, Gd, and Er) films, indicating the solid evidence of poor crystallinities. The formation of RE silicates, which has been observed in previous reports, is also confirmed in our study by characterizing the binding energies of Si 2s or Si 2p for top surfaces and interiors of Ln 2 O 3 films, as shown in Figure S6 and Table S4. − The photoemission electrons of Si can be observed in the spectra monitored both on the top surfaces and interiors after 5 nm of argon ions sputtering, indicating that the migration of Si atom from substrate into the films occurs while annealing. On one hand, the formation of RE silicates is an advantage for the application of REOs films as dielectrics due to their low leakage current density, while on the other hand, the relative low dielectric constant deteriorates their potential application as capacitor.…”

Section: Resultssupporting

confidence: 90%

Solution-Processed Rare-Earth Oxide Thin Films for Alternative Gate Dielectric Application

Zhuang

Sun

Zhou

et al. 2016

ACS Appl. Mater. Interfaces

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Previous investigations on rare-earth oxides (REOs) reveal their high possibility as dielectric films in electronic devices, while complicated physical methods impede their developments and applications. Herein, we report a facile route to fabricate 16 REOs thin insulating films through a general solution process and their applications in low-voltage thin-film transistors as dielectrics. The formation and properties of REOs thin films are analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), spectroscopic ellipsometry, water contact angle measurement, X-ray photoemission spectroscopy (XPS), and electrical characterizations, respectively. Ultrasmooth, amorphous, and hydrophilic REO films with thickness around 10 nm have been obtained through a combined spin-coating and postannealing method. The compositional analysis results reveal the formation of RE hydrocarbonates on the surface and silicates at the interface of REOs films annealed on Si substrate. The dielectric properties of REO films are investigated by characterizing capacitors with a Si/LnO/Au (Ln = La, Gd, and Er) structure. The observed low leakage current densities and large areal capacitances indicate these REO films can be employed as alternative gate dielectrics in transistors. Thus, we have successfully fabricated a series of low-voltage organic thin-film transistors based on such sol-gel derived REO films to demonstrate their application in electronics. The optimization of REOs dielectrics in transistors through further surface modification has also been studied. The current study provides a simple solution process approach to fabricate varieties of REOs insulating films, and the results reveal their promising applications as alternative gate dielectrics in thin-film transistors.

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Section: Resultssupporting

confidence: 90%

Solution-Processed Rare-Earth Oxide Thin Films for Alternative Gate Dielectric Application

Zhuang

Sun

Zhou

et al. 2016

ACS Appl. Mater. Interfaces

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“…28 On the other hand, 900 °C was the ideal condition for the annealing temperature to deduce the interface traps and defects and , consequently, upgrade material characteristics to manufacture a well-qualified crystalline film. 83 Furthermore, the lessening of the retention period extrapolated at 10 years on the order of 12% was resolved, which is comparatively low in contrast with metal− insulator−semiconductors (MIS) stacks alongside high-k dielectric layers of atomic layer deposition (ALD). 26 Apart from these, the gadget constructed of ITO/Eu 2 O 3 /ITO/PET demonstrates superior features.…”

Section: Electronic Devicesmentioning

confidence: 99%

“…6 Additionally, the higher-k Gd 2 O 3 interdielectric demonstrates a promise for the upcoming generation of rare earth oxides memory applications. 83 4.2. Metal Oxide Semiconductors (MOSs).…”

Section: Electronic Devicesmentioning

confidence: 99%

“…Moreover, the device made by Gd 2 O 3 –NC also demonstrated longer memory retention where less than 15% charge loss is observed after 10 4 s. The expanded physical thickness of the tunneling layer made it possible, demonstrated in Figure . On the other hand, 900 °C was the ideal condition for the annealing temperature to deduce the interface traps and defects and , consequently, upgrade material characteristics to manufacture a well-qualified crystalline film . Furthermore, the lessening of the retention period extrapolated at 10 years on the order of 12% was resolved, which is comparatively low in contrast with metal–insulator–semiconductors (MIS) stacks alongside high- k dielectric layers of atomic layer deposition (ALD) .…”

Section: Electronic Devicesmentioning

confidence: 99%

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Recent Progress of Rare Earth Oxides for Sensor, Detector, and Electronic Device Applications: A Review

Hossain

Ahmed

Khan

et al. 2021

ACS Appl. Electron. Mater.

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Rare earth oxides (REOs) are deemed important from both industrial implementation and research insight perspectives. One of the most conspicuous attributes of REOs is sensing, which contributes significantly to the development of diversified and robust systems of sensors and detector devices. However, there has not been any organized review that has pointed out critical insights from the sensor, detector, and electronic device perspectives that can invoke further studies to investigate the prospective and commercially relevant areas to date. To address this limitation, this review undertakes a focused report approach. From this concise yet comprehensive review, it has been prominent that the most significant contributions to the sensing and detecting fields by the REOs are in electrochemical, temperature, humidity, radiation, gas, and biosensors. Moreover, in terms of electronic device development, REOs have had a significant impact on memory devices, metal oxide semiconductors, dielectric materials, capacitors, energy storage devices, and so on. Furthermore, one of the key findings of the study is that the REOs have flexible doping (e.g., Er3+, Yb3+, Y3+, etc.) capability combined with other host materials such as HfO2 film, SiO2 stacks, TiO2, SnO2 nanostructures, etc., which will likely make REO-based electrochemical sensor and biosensor development the most promising sector in the coming years. Despite the impressive aspects, biocompatibility issues in several biological and biomedical systems along with the hygroscopic nature of REOs in electronic devices remain as concerns. However, these issues can be addressed by the advancement of intricate technologies such as targeted manipulation of the electronic configuration of REOs, multifarious doping experiments to obtain alternative mechanisms, etc. to obtain superior biocompatibility, and device development systems that are noninvasive to the environment. From the commercialization front, memory devices and energy storage devices will be the focusing points for large-scale investors due to improved mechanical (i.e., Young’s modulus, intrinsic stress, etc.) and electrical (i.e., high dielectric constant, resistivity, relative permittivity, etc.) properties, while REO-based metal oxide semiconductor and capacitor development is likely to be research-oriented for the next few years before making the eventual move to futuristic applications at a large industrial scale. In short, this review reports a substantial number of relevant studies that will pave the way for further experimental and computational investigations on REOs and their sensor, detector, and electronic device aspects.

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“…In recent years, lanthanide oxides such as Er 2 O 3 [3], Sm 2 O 3 [4], Gd 2 O 3 [5] have been proposed to substitute SiO 2 as the gate oxide because of large band offsets with Si and high dielectric values. The equivalent capacitance of a high-k dielectric can be fabricated in a physically thicker film so higher dielectric breakdown and smaller leakage current can be achieved [6].…”

Section: Introductionmentioning

confidence: 99%

High-κ NdTaO4 dielectrics deposited on polycrystalline silicon substrates

Kao

Lin

et al. 2015

J Mater Sci: Mater Electron

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High-k NdTaO 4 dielectrics annealed with various temperatures were first deposited on polycrystalline silicon substrates. Material and electrical characterizations were performed. To examine the crystalline structures, X-ray diffraction patterns were analyzed. Electrical measurements including current-voltage characteristics, constant current stress, and the Weibull plots show that annealing could enhance the breakdown voltages, lower the trapping rate, and strengthen the reliability. Results indicate that annealing at 900°C may optimize the dielectric performance. This dielectric shows promise for future gate material or flash memory integrated with current NdTaO 4 -based optical devices.

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The Investigation of the High-k Gd[sub 2]O[sub 3] (Gadolinium Oxide) Interdielectrics Deposited on the Polycrystalline Silicon

Cited by 19 publications

References 14 publications

Solution-Processed Rare-Earth Oxide Thin Films for Alternative Gate Dielectric Application

Solution-Processed Rare-Earth Oxide Thin Films for Alternative Gate Dielectric Application

Recent Progress of Rare Earth Oxides for Sensor, Detector, and Electronic Device Applications: A Review

High-κ NdTaO4 dielectrics deposited on polycrystalline silicon substrates

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