Articles you may be interested inAdsorption and decomposition of diethylsilane and diethylgermane on Si(100): Surface reactions for an atomic layer epitaxial approach to column IV epitaxyThe chemisorption and reaction of diethylsilane on silicon (100) and (111) surfaces The adsorption and decomposition kinetics of diethylsilane (DES), (CH 3 CH z ) 2 SiH 2 , on silicon surfaces were studied using laser-induced thermal desorption (LITO), temperature programmed desorption, and Fourier transform infrared (FTIR) spectroscopic techniques. LlTD measurements determined that the initial reactive sticking coefficient of DES on Si ( 111) 7 X 7 decreased versus surface temperature from SoThe temperature-dependent sticking coefficients suggested a precursor-mediated adsorption mechanism. FTIR studies on high surface area porous silicon surfaces indicated that DES adsorbs dissociatively at 300 K and produces SiH and SiC 2 Hs surface species. Annealing studies also revealed that the hydrogen coverage on porous silicon increased as the SiC 2 H; surface species decomposed. CH z =CH 2 and H2 were the observed desorption products at 700 and 810 K, respectively, following DES adsorption on SiC 111) 7 X 7. The ethylene desorption and growth of hydrogen coverage during ethyl group decomposition were consistent with a ,B-hydride elimination mechanism for the SiC 2 H; surface species, i.e., SiC 2 Hs -> SiH + CH 2 -=CH 2 .Isothermal LITD studies monitored the decomposition kinetics of SiC 2 Hs on Si ( Ill) 7 X 7 as a function of time following DES exposures. The first-order decomposition kinetics were Ed = 36 keal/mol and v d = 2.7 X 10 9 s -I. These decomposition kinetics suggest that the silicon surface catalyzes the f3-hyddde elimination reaction. 221