The kinetics of electrocrystallization of tellurium and cadmium telluride at the glassy carbon surface

Mori, E.; Rajeshwar, Krishnan

doi:10.1016/0022-0728(89)85125-3

Cited by 39 publications

(27 citation statements)

References 45 publications

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“…8. Optimum optical gap energy E g * 1.56 eV determined for film deposited at 15 mA cm -2 is in agreement with the bulk data [24]. The marginal decrease in E g is consistent with the deviation in the film composition as pulse current density used for CdTe electrodeposition increases.…”

Section: Optical Absorptionsupporting

confidence: 77%

“…During the anodic cycle after C 2 , plateau C 3 indicates that the recovery process is rather weak. As suggested by Mori et al [24], this may be due to partially irreversible chemical reaction between electro generated H 2 Te after cathodic wave C 2 and adsorbed HTeO 2 ? species on the FTO coated cathode, which is given by [28],…”

Section: Electrochemical Studiesmentioning

confidence: 94%

“…Formation of H 2 Te is not unusual and has been seen in Pt electrodes around the same potential [24,26,27]. The reverse wave manifests as anodic wave A 2 as follows,…”

Section: Electrochemical Studiesmentioning

confidence: 96%

“…Present understanding of the electrodeposition of various compound semiconductor CdTe [24,29], ZnTe [30] and MnIn 2 Te 4 [31,32] thin films is based on the DC method. With Te in acidic (H 2 SO 4 ) electrolytic medium present as stable HTeO 2 ?…”

Section: Cdte Film Growth Mechanismmentioning

confidence: 99%

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Properties and mechanism of solar absorber CdTe thin film synthesis by unipolar galvanic pulsed electrodeposition

Rastogi

Sharma

2008

J Appl Electrochem

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Electrochemical deposition of CdTe semiconductor thin films over transparent conducting glass substrates by sequential unipolar current pulses is described. The magnitude of pulsed current and pulse periodicity affects the crystalline structure, morphology, optical absorbance and composition of CdTe films. CdTe films formed under high magnitude pulsed current density *5-15 mA cm -2 are crystalline with dominant cubic structure having (111) plane oriented parallel to the substrate. Stoichiometric CdTe film growth occurs with current pulses of short 25-300 ms periodicity and 3-50 ms duration. A mechanism of the CdTe growth involving in situ cathodic tellurization process step involving H 2 Te formation and reaction with electrochemically deposited Cd monolayer is described. CdTe film growth in the pulsed electrodeposition occurs under mass transport conditions under strong influence of high magnitude pulsed current. This results in much higher growth rates *5-8 lm h -1 for CdTe films which is attractive for CdTe solar cells in a production environment.

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Section: Optical Absorptionsupporting

confidence: 77%

Section: Electrochemical Studiesmentioning

confidence: 94%

“…Formation of H 2 Te is not unusual and has been seen in Pt electrodes around the same potential [24,26,27]. The reverse wave manifests as anodic wave A 2 as follows,…”

Section: Electrochemical Studiesmentioning

confidence: 96%