The kinetics of the growth of nitrogen-doped ZnSe grown by photo-assisted MOVPE

In-situ post annealing treatment of nitrogen-doped ZnSe grown using photo-assisted MOVPE

“…6 The dopant precursor used in these experiments was trimethylsilylazide (TMSiN 3 ) which has the advantage of not having any N-H bonds and is expected to decompose on the surface by bond homolysis. These precursors were shown previously to provide the best combination of low hydrogen concentration in the undoped layer, with good surface morphology for photo-assistance from 458 nm argon ion laser irradiation.…”

“…1 as a plot of interferometer intensity versus time. 6 The substrate rotation was turned off in this phase but periodically rotated to expose a new area of the substrate to the interferometer beam. A horizontal interferometer intensity with respect to time (constant signal) indicates that no growth is taking place.…”

“…Progress in recent years has been made in the choice of precursors which can decompose at sufficiently low temperatures but the incorporation of hydrogen due to N-H bonds in for example ( t BuNH 2 ) is still likely to be a source of hydrogen which passivates the N dopant. 5,6 The hydrogen radicals are released by reaction of methyl radicals with hydrogen gas, the methyl radicals come from the photo-catalysis of adsorbed DMZn. 4 This has been used to incorporate hydrogen into ZnSe up to a concentration of 1 × 10 20 cm -3 but the hydrogen concentration was also seen to increase from a base of 1 × 10 17 cm -3 to 2 × 10 19 cm -3 .…”