The Lattice Location of Boron Ions Implanted Into Silicon

Fladda, G.; Björkqvist, K.; Eriksson, Lennart C.; Sigurd, D.

doi:10.1063/1.1653208

Cited by 90 publications

(13 citation statements)

References 7 publications

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“…This annealing behaviour is in contrast to that observed for Si which had been implanted with B at room temperature [30,31] (but not subsequently annealed), where the fraction of displaced B atoms increased during annealing from 450-750 K. It can be concluded that the implantation damage produced a different and probably more complicated defect configuration containing B. This is expected because the defect distribution produced in cascades from r 50 keV B ion irradiation is more complex than that from 0.7 MeV H+ irradiation.…”

Section: Angular Scanscontrasting

confidence: 81%

“…One of the samples had been irradiated with 0.7 MeV H to a fluence of 7 x 1016 cm-2 at 35 K, and the second sample had been irradiated to a fluence of 4 x 10 16 cm-2 at 300 K. The major displacement of B atoms occurred during an annealing stage centered at 240 K (as observed previously for a thermally diffused crystal [20]), while the recovery of this B atom displacement occurred over a broad temperature range from 425-825 K. This latter recovery behaviour was in marked contrast to that reported [30,31] for The apparent displaced fraction of B atoms fd<lmn> for <100> and <110> channels is shown as a function of annealing temperature (600 s pulse anneals) for two samples.…”

Section: Annealingcontrasting

confidence: 57%

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A Channeling Study of Defect-Boron Complexes in Si

et al. 1980

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Si crystals were doped with 0.1-0.2 at% 11B in the near surface region by ion implantation followed by thermal diffusion at 1373 K or by ruby laser annealing.The position of the B atoms in the Si lattice was determined by channeling measurements, utilizing both the yield of H+ ions (of incident energy 0.7 MeV) backscattered from Si atoms and the yield of alpha particles from the 1 1 B(p,a)8Be nuclear reaction.Initially, 95-99% of the B atoms were substitutional. Irradiation at 35 K or 293 K with 0.7 MeV H+ displaced B atoms from lattice sites.The displacement rate was greater at 293 K than at 35 K, and was greater for diffused samples than for laser annealed samples.Following 35 K irradiations, a large increase in the fraction fdB of displaced B atoms occurred during annealing near 240 K. At higher annealing temperatures, fdB decreased over a broad temperature range from 425-825 K. Angular scans through <110> channels for the laser annealed samples after 293 K irradiation or after 35 K irradiation plus 293 K annealing showed a pronounced narrowing of the dip in 1 1 B(p,a) 8 Be yields compared with the dip in yields from Si, whereas no narrowing was observed for <100> channels.These results indicate that B atoms were displaced into specific lattice sites by the migration of an interstitial B defect (the EPR G28 defect) near 240 K.

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Section: Angular Scanscontrasting

confidence: 81%

Section: Annealingcontrasting

confidence: 57%

A Channeling Study of Defect-Boron Complexes in Si

et al. 1980

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“…The value of boron atoms sited in the substitution position after implantation depends on the dose of ion implantation and may exceed 60%. 37 The annealing at 500-950°C is usually accompanied by the process of reverse annealing of the doping impurities. During this process impurities escape from the substitution position in the semiconductor lattice into the interstitial position.…”

Section: Discussionmentioning

confidence: 99%

Harnessing reverse annealing phenomenon for shallow p-n junction formation

Krasnobaev

Cuomo

Vyletalina

1997

Journal of Applied Physics

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Monocrystalline silicon was implanted with 60 keV fluorine and 20 keV boron ions and annealed. Carrier profile, fluorine and boron redistribution, and the parameters of p+-n junctions were investigated. In ion implanted Si two specific regions were observed in which peculiarities in carrier concentration, resistivity, and F atoms redistribution occurred. It was reasoned that the “under-surface” specific region is enriched with vacancy-type defects while the “amorphous/crystalline (a/c) interface” region is enriched with interstitial type defects. After annealing at a temperature corresponding to the reverse annealing phenomenon, boron atoms were activated in the “under-surface” and deactivated in the “a/c interface” region. The possibility of PMOS transistor fabrication with ultrashallow p+-n junction (60 nm) and low leakage current by F++B+ implantation and low temperature (600–700) °C annealing by using this phenomenon was demonstrated.

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“…Several properties of the 1.018 eV peak (11) have been investigated, and certain conclusions can be drawn about the defect's luminescence. The half-width of the I1 peak follows a nonlinear dependence on sample temperature, suggesting bound carrier to bound carrier transitions.'…”

Section: Figurementioning

confidence: 99%