The Low-Field Electron Mobility in Bulk AlGaN

Ridley, B. K.

doi:10.1002/(sici)1521-396x(199911)176:1<359::aid-pssa359>3.0.co;2-2

Cited by 16 publications

(6 citation statements)

References 12 publications

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“…To clarify the expected performance of these materials, transport as well as device studies are critical. Though there has been recent theoretical [16]- [27] and experimental [28]- [32] work on the transport properties of the binary compounds and their related devices [33]- [35], there has been little information about the transport properties of the ternary compounds [36]. It is the purpose of this paper to provide a comprehensive Monte-Carlo-based study of the key, low field, transport parameters of the III-nitride ternary compounds useful in device level simulation.…”

mentioning

confidence: 99%

Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries

Farahmand¹,

Garetto

Bellotti

et al. 2001

IEEE Trans. Electron Devices

409

185

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We present a comprehensive study of the transport dynamics of electrons in the ternary compounds, Al Ga 1 N and In Ga 1 N. Calculations are made using a nonparabolic effective mass energy band model, Monte Carlo simulation that includes all of the major scattering mechanisms. The band parameters used in the simulation are extracted from optimized pseudopotential band calculations to ensure excellent agreement with experimental information and ab initio band models. The effects of alloy scattering on the electron transport physics are examined. The steadystate velocity field curves and low field mobilities are calculated for representative compositions of these alloys at different temperatures and ionized impurity concentrations. A field dependent mobility model is provided for both ternary compounds AlGaN and InGaN. The parameters for the low and high field mobility models for these ternary compounds are extracted and presented. The mobility models can be employed in simulations of devices that incorporate the ternary III-nitrides.Index Terms-Monte Carlo method, semiconductor materials, wide bandgap semiconductors.

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mentioning

confidence: 99%

Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries

Farahmand¹,

Garetto

Bellotti

et al. 2001

IEEE Trans. Electron Devices

409

185

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“…Assuming homogenous distribution of both phases the decrease in conductivity is thus expected due to the decrease in mobility of the carriers moving across the different phases [27]. Beside this, the effect of the alloy fluctuations on electron drift mobility would also be taken into account for further consideration for the low conductivity in Zn 1−x Cd x O alloy films [28].…”

Section: I-v Characteristicsmentioning

confidence: 99%

“…Therefore, we have used the value of 0.24m 0 for ZnO film with wurtzite structure [34]. The electron effective mass of Zn 0.41 Cd 0.59 O sample was determined to be 0.36m 0 by means of a linear extrapolation of the electron effective mass values [28] for the wurtzite phase with m*(ZnO) = 0.24m 0 and for the cubic phase with m*(CdO) = 0.44m 0 [35]. The values of the attempt-to-escape frequency and the capture cross-section S calculated from the curve fitting results are also given in Table 3.…”

Section: Samplementioning

confidence: 99%

Thermally stimulated current analysis of Zn1−xCdxO alloy films

Aybek¹,

Baysal²,

Zor³

et al. 2011

Journal of Alloys and Compounds

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“…The two-mode character of the alloy is quantified using the assumption that the dielectric function can be expressed as the sum of the polarizabilities of the two binaries AlN and InN [3] as was done for AlGaN [4]. These alloy modes have frequencies that lie in the vicinity of the LO and TO frequencies of GaN, which might suggest that they may propagate through the superlattice.…”

Section: Phononsmentioning

confidence: 99%

Electron scattering in a polarization superlattice

Ridley¹

2002

J. Phys.: Condens. Matter

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A superlattice composed of materials exhibiting spontaneous electrical polarization has strong electric fields in both wells and barriers. Electrons in the wells are confined in deep triangular potentials whereas polar-optical phonons are confined in square wells. The electron-phonon interaction therefore presents novel features, and these are explored here in the system Al 1−x In x N/GaN assumed to be lattice-matched. The dielectric-continuum model is used to calculate bulk alloy and interface mode properties, and threshold scattering rates are estimated. The reduced role of phonon symmetry is pointed out.

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The Low-Field Electron Mobility in Bulk AlGaN

Cited by 16 publications

References 12 publications

Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries

Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries

Thermally stimulated current analysis of Zn1−xCdxO alloy films

Electron scattering in a polarization superlattice

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