The matrix infrared spectrum of PN and SiS

Atkins, Robert; Timms, Peter L.

doi:10.1016/0584-8539(77)80083-4

Cited by 76 publications

(50 citation statements)

References 5 publications

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“…The band at 710 cm -1 was more pronounced in samples prepared with additional hydrogen flow [19]. Its spectral position is close to the calculated (701 cm ) vibrational frequencies of the SiS molecule [39][40][41]. However, we think that more experimental data are required to probe the nature of this band.…”

Section: Sulphur-induced Bands In the 400-500 CM -1 Regionmentioning

confidence: 93%

Spectroscopic and Optoelectronic Properties of Hydrogenated Amorphous Silicon-Chalcogen Alloys

Dallal¹

2015

Superalloys

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Hydrogenated amorphous silicon-chalcogen alloy thin films have been the subject of growing interest during the past two decades. Thin films of these alloys are usually prepared by the decomposition of SiH 4 and H 2 S or H 2 Se gas mixtures in a radiofrequency plasma glow discharge at a substrate temperature of 250°C. The alloy composition is varied by changing the gas volume ratio R V = [chalcogen/ silane]. Infrared spectroscopy is used to explore the bonding structure of the alloy.The material exhibits hydrogen-induced bands, normally observed in a-Si:H spectra and other chalcogen-induced bands resulting from bonding chalcogen atoms with hydrogen and silicon. Analysis of the vibrational spectra of this material reveals the presence of significant levels of Si-chalcogen-SiH n configurations. Optical and electrical measurements show that increasing the chalcogen content results in an increase of the optical (Tauc) gap and a decrease in dark conductivity and photoconductivity. Subgap absorption measurements are employed to probe the Urbach energy and defect density. Upon increasing the chalcogen content, a broadening of band tails and an increase in defect density is observed. These results are shown to be consistent with photoluminescence measurements carried out on these materials.

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Section: Sulphur-induced Bands In the 400-500 CM -1 Regionmentioning

confidence: 93%

Spectroscopic and Optoelectronic Properties of Hydrogenated Amorphous Silicon-Chalcogen Alloys

Dallal¹

2015

Superalloys

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“…The 600-1000 cm À1 region is of low diagnostic value and can include [31,33,34] d(SiH n (860 and 900 cm À1 ), n(Si-C) ($800 cm À1 ), n(C-C-S) (650-900 cm À1 ) and n(S-C-S) (940-960 cm À1 ) bands. The broad absorption pattern and the dominant n(Si-S-Si) bands do not allow identification of SiS bands (740, 456 and 500 cm À1 [35]). The band at 1080 cm À1 n(SiO) reveals a low extent of Si-S bond hydrolysis on the KBr substrate.…”

Section: Properties Of Solid Depositsmentioning

confidence: 93%

IR laser-induced co-decomposition of gaseous trisilane and carbon disulfide

Pola

Pokorná

Šubrt

et al. 2008

Journal of Analytical and Applied Pyrolysis

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“…substitution of Si in the silicon matrix (polysilane) for more electronegative S atoms [32]. We note that SiS can be also present in the deposited films, but its absorption bands at 456, 500 and 740 cm À1 [35] are overlapped with the other vibrational modes.…”

Section: Properties Of Solid Depositsmentioning

confidence: 96%