The measurement uncertainty challenge for the future technological nodes production and development

Foucher, J.; Faurie, P.; Foucher, A.-L.; Cordeau, M.; Farys, V.

doi:10.1117/12.812446

Cited by 10 publications

(5 citation statements)

References 6 publications

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“…We have shown in previous papers 3,4,5 that the CD-AFM technique is a unique solution for In-line CD measurements as a complementary technique to traditional techniques such as CD-SEM and Scatterometry. Such techniques are suffering from a lack of accuracy that is necessary for future nodes development and production in addition to precision requirement.…”

Section: Introductionmentioning

confidence: 98%

3D-AFM tip to tip variations and impact on measurement performances

Foucher

Dourthe

2010

SPIE Proceedings

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The CD metrology requirements for advanced node developments and process control are becoming more and more restrictive with shrinkage of dimensions. Currently in R&D, and more particularly in the process development in lithography or etching step, we have to cope with sub40nm trenches CD measurements for sub-28nm nodes development.For such requirements, we are using the 3D-AFM technology as a complementary technique to CD-SEM. Indeed, as CD-SEM is limited in giving accurate information about profiles, the 3D-AFM technology must be considered. To succeed in measuring on a repeatable way and accurately sub40nm trenches and contact holes, the 3D-AFM tips diameter has to be manufactured within tight specifications and the relative accuracy tip to tip must remains constant and reliable.In this paper, we will present a large set of data related to the use of various 3D-AFM tip models (diameter, tip edge, tip material, stiffness…) from large model to tiny model with typical tip diameter of 28nm. We compare the performances of each model in term of accuracy and repeatability, and extrapolate the industrial requirements that are necessary for tip manufacturing in order to be compatible with advanced roadmap requirements. Finally, we will present as function of tip model the relative accuracy of CD measurements.

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Section: Introductionmentioning

confidence: 98%

3D-AFM tip to tip variations and impact on measurement performances

Foucher

Dourthe

2010

SPIE Proceedings

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“…Most studies on photoresist shrinkage so far have mainly focused on the phenomenology of linewidth slimming [10][11][12][13][14][15][16][17] or the microscopic mechanisms of local volume reduction in the second step, namely, the interaction between an electron and photoresist molecules. [18][19][20] Some recent studies examined the effects of electrons scattered from spaces between patterns [21][22][23][24] and elastic deformation on pattern shape. 25,26) Nevertheless, the experimental verifications of such effects were limited because they were based on measurements with an atomic force microscope (AFM) or an SEM.…”

Section: Introductionmentioning

confidence: 99%

Precise Cross-Sectional Measurement of Photoresist Shrinkage Caused by Electron Beam Irradiation

Ohashi

Sekiguchi

Yamaguchi

et al. 2013

Jpn. J. Appl. Phys.

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A mechanism of the photoresist shrinkage induced by electron-beam (EB) irradiation was studied in detail. A precise cross-sectional profile of a photoresist pattern is obtained by a scanning transmission electron microscope (STEM) after HfO2 atomic layer deposition on a sample. Photoresist lines and spaces formed on either of bottom anti-reflective coating (BARC) layer or spin-on-glass (SOG) layer were exposed to EB at a much higher dose than a practical dose (to accelerate shrinkage intentionally). The obtained STEM images of the patterns before and after EB irradiation showed that EB irradiation causes necking of the pattern profile as well as linewidth slimming. In addition, it was suggested that the BARC layer shrinkage results in the elastic deformation of the pattern profile, whereas the SOG layer does not shrink. Furthermore, EB irradiation only to the lines or spaces was performed. The EB irradiation to spaces caused sidewall shrinkage and necking of the pattern profile, although no electron was irradiated directly into the pattern. This result is considered to be due to the electrons scattered from the spaces to the pattern sidewall. Finally, a Monte Carlo simulation showed that the distribution of the deposited energy on the pattern surface corresponds to the change of the pattern shape. Consequently, our study clarifies the importance of the effect of elastic shape change and the impact of the electrons scattered from the underlying layer to the sidewall on photoresist shrinkage.

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“…Studies on photoresist shrinkage so far have focused on the microscopic interaction between an electron and photoresist molecules [10][11][12] or on the macroscopic tendency of shrinkage due to uniform irradiation. [13][14][15][16][17] In contrast, our approach can provide information on how the microscopic volume-reduction caused by electron-molecule interactions is integrated into macroscopic pattern deformation.…”

Section: Introductionmentioning

confidence: 99%

Photoresist Shrinkage Caused by Single-Line Scan of Electron Beam

Ohashi¹,

Tanaka²

2012

Jpn. J. Appl. Phys.

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Shrinkage behavior caused by a single-line scan of an electron beam over a photoresist line was observed, including shrinkage distribution in the photoresist-line direction. A new method for evaluating the minute amount shrinkage and the shrinkage distribution caused by a single-line scan was developed. According to the results of evaluations with this method, the shrinkage of an about 50-nm-wide photoresist line caused by a single-line scan is less than 0.1 nm under landing energies of 200, 300, and 500 eV and probe current of 8 pA. This shrinkage is more than ten times smaller than the typical amount of shrinkage caused by a standard two-dimensional scan. This result indicates the possibility of a significant reduction of photoresist shrinkage during scanning-electron-microscope measurements. The evaluation method also yielded the first observation of the shrinkage distribution in the photoresist-line direction. The results show that the shrinkage caused by a single-line scan distributes more than 30 nm, which is wider than the calculated electron-scattering range. This result suggests that there likely to be an additional mechanism involved in photoresist shrinkage other than the microscopic interaction between incident electrons and photoresist molecules. An elastic-relaxation effect and a contribution of back-scattered electrons are plausible additional mechanisms for photoresist shrinkage.

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The measurement uncertainty challenge for the future technological nodes production and development

Cited by 10 publications

References 6 publications

3D-AFM tip to tip variations and impact on measurement performances

3D-AFM tip to tip variations and impact on measurement performances

Precise Cross-Sectional Measurement of Photoresist Shrinkage Caused by Electron Beam Irradiation

Photoresist Shrinkage Caused by Single-Line Scan of Electron Beam

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