2006
DOI: 10.1088/0022-3727/39/11/017
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The mechanical behaviour of NBR/FEF under compressive cyclic stress–strain

Abstract: Acrylonitrile butadiene rubber compounds filled with different concentrations of fast extrusion furnace (FEF) carbon black were experimentally investigated. The stress–strain curves of the composites were studied, which suggest good filler–matrix adhesion. The large reinforcement effect of the filler followed the Guth model for non-spherical particles. The effect of FEF carbon black on the cyclic fatigue and hysteresis was also examined. The loading and unloading stress–strain relationships for any cycle were … Show more

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Cited by 85 publications
(15 citation statements)
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“…The piezo-resistive effects practically are thermally stable within the interval of 297-308 K. 5. The working range of load pressure, for sample N70, from 5 to 25 kg and the working voltage from 30 to 150 V.…”
Section: Electrically Conductive Acrylonitrile Butadiene Rubber (Nbr)mentioning
confidence: 99%
See 1 more Smart Citation
“…The piezo-resistive effects practically are thermally stable within the interval of 297-308 K. 5. The working range of load pressure, for sample N70, from 5 to 25 kg and the working voltage from 30 to 150 V.…”
Section: Electrically Conductive Acrylonitrile Butadiene Rubber (Nbr)mentioning
confidence: 99%
“…The choice of rubber and filler type is basically related to this program, where in fact it is already recognized that carbon black plays a dominant role in determining the electrical and mechanical properties of polymer-based composites [4]. For this reason fast extrusion furnace (FEF) carbon black is used in the present work because it has a large particle size particle diameter and low tendency to form aggregates and in turn very low hysteresis compared with the other types of carbon black [5].…”
Section: Introductionmentioning
confidence: 99%
“…As seen in Fig.4, the ideality factor and barrier height of the device increases with increasing temperature. High ideality factor may be attributed to various reasons such as defects at the interface of GaSe/Si junctions and recombination of charge carriers [24][25][26]. The increase of the barrier height is mainly governed by the transport of current across the interface between the metal and the semiconductor.…”
Section: Resultsmentioning
confidence: 99%
“…12 The samples were compression-molded into sheets with a steel die, which had dimensions of a 1 Â 10 À4 m 2 area and a 0.01-m height. The vulcanization was conducted under a heating press (KARL KOLB, USA) at a temperature (T) of 423 6 2 K under a pressure of 4 MPa for 30 min.…”
Section: Methodsmentioning
confidence: 99%