The mechanism of Fenton reaction of hydrogen peroxide with single crystal 6H-SiC substrate

Deng, Jiayun; Pan, Jisheng; Zhang, Qixiang; Yan, Qiusheng; Lu, Jiabin

doi:10.1016/j.surfin.2020.100730

Cited by 20 publications

(20 citation statements)

References 41 publications

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“…This is consistent with the low removal rate of the oxide in CMP on the Siface. 13,20,23 In contrast, the intermittent (not continuous) water reaction and the lattice distortion around the protruding Si atom are likely to assist with oxidation on the C-face, which is consistent with the higher oxidation rate and higher removal rate of the oxide on this face. 13,20,23 Our calculations have also shown that the reaction of a hydrogen peroxide molecule proceeds differently on the Siand C-faces.…”

Section: ■ Conclusionmentioning

confidence: 55%

“…Hence, oxidation by hydrogen peroxide tends to be less favored on the Si-face, consistent with the low oxidation rate of the Si-face in the experiment. 13,20,23 Finally, we look at the adsorption free energy of hydrogen peroxide. Figure 5 shows the free-energy profiles as a function of the distance between a hydrogen peroxide molecule and the SiC surface, which demonstrates how the H 2 O 2 molecule approaches the SiC surface.…”

Section: Ev and Then Increases Within A Distance Of ∼2 å (Panel B) A ...mentioning

confidence: 99%

“…Also found is that the reaction of a hydrogen peroxide molecule takes place in different ways on the Si-and C-faces, which results in more frequent production of oxygen molecules on the C-face and thus accounts for its higher oxidation rate observed in the experiment. 12,13,20,23 In this study, the reactivity of water and hydrogen peroxide molecules in the preliminary stages of the oxidation process is the focus of interest, where the reactions in a pure aqueous H 2 O 2 solution, without catalysts, are expected to be predominant (i.e., the reactions involving OH radicals generated by Fenton catalysis are beyond the present scope, which are dealt with in another paper 24 ). Given that in the reaction process in CMP, the adsorbates on the SiC surface are removed repeatedly by mechanical polishing, we mainly consider the reactions on the clean SiC surface, in addition to the hydroxylated surface which is easily formed in contact with aqueous solution.…”

Section: ■ Introductionmentioning

confidence: 99%

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Cooperative Reaction of Hydrogen-Networked Water Molecules at the SiC–H₂O₂ Solution Interface: Microscopic Insights from Ab Initio Molecular Dynamics

et al. 2022

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Interest in silicon carbide (SiC) has grown steadily over the years because of its fascinating properties for power electronic devices. Chemical mechanical polishing (CMP) with aqueous oxidant solutions has been a key approach for obtaining efficient machining of SiC surfaces; however, little is known about the chemical reactions at the SiC−aqueous solution interface. Here, we demonstrate using ab initio molecular dynamics simulations that water molecules are highly reactive on both the Si-terminated (0001) and C-terminated (0001̅ ) faces of SiC surfaces in contact with a hydrogen peroxide solution. Cooperative hydrogen transfer is found to accelerate the reaction at the SiC−solution interface, which occurs not only on the Si-terminated face but also on the C-terminated face in contrast to previous calculations. We also find that the reaction of a hydrogen peroxide molecule proceeds differently on the Si-and C-terminated faces, which may account for the different oxidation rates of these surfaces. The present results provide new insights into the initial stage of SiC oxidation, particularly by CMP with aqueous oxidant solutions.

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Section: ■ Conclusionmentioning

confidence: 55%

Section: Ev and Then Increases Within A Distance Of ∼2 å (Panel B) A ...mentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Cooperative Reaction of Hydrogen-Networked Water Molecules at the SiC–H₂O₂ Solution Interface: Microscopic Insights from Ab Initio Molecular Dynamics

et al. 2022

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“…The concentration of Fe 2+ , H 2 O 2 and pH value in Fenton reagent will affect the concentration of ˙OH generated in Fenton reaction, thereby affecting the quality of the polished surface. Deng et al 19 combined the Fe 3 O 4 catalyst and H 2 O 2 oxidant to produce the Fenton reaction, in which ˙OH with strong oxidizability was generated. However, the randomness of the Fenton reaction process makes the concentration of ˙OH uncontrollable.…”

Section: Introductionmentioning

confidence: 99%

Investigation of oxidation mechanism of SiC single crystal for plasma electrochemical oxidation

Yin

et al. 2021

RSC Adv.

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“…Therefore, domestic and foreign scholars in the field of precise machining have put forward many hybrid machining methods by introducing the external energy field. Electrochemical mechanical polishing (ECMP) [ 8 , 9 ], plasma-assisted polishing [ 10 , 11 ], UV (ultraviolet) photocatalytic-assisted polishing [ 12 , 13 ], laser-induced assisted polishing [ 14 , 15 ], and Fenton oxidation-assisted polishing [ 16 ] were included. In essence, these methods improved the oxidation corrosion performance of SiC by different external energies, which made the material easy to be removed.…”

Section: Introductionmentioning

confidence: 99%

Study on Improving the Precise Machinability of Single Crystal SiC by an Ultrasonic-Assisted Hybrid Process

Shi

Zhao

et al. 2021

Materials

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Silicon carbide (SiC) devices have become one of the key research directions in the field of power electronics. However, due to the limitation of the SiC wafer growth process and processing capacity, SiC devices, such as SiC MOSFET (Metal-oxide-semiconductor Field-effect Transistor), are facing the problems of high cost and unsatisfied performance. To improve the precise machinability of single-crystal SiC wafer, this paper proposed a new hybrid process. Firstly, we developed an ultrasonic vibration-assisted device, by which ultrasonic-assisted lapping and ultrasonic-assisted CMP (chemical mechanical polishing) for SiC wafer were fulfilled. Secondly, a novel three-step ultrasonic-assisted precise machining route was proposed. In the first step, ultrasonic lapping using a cast iron disc was conducted, which quickly removed large surface damages with a high MRR (material removal rate) of 10.93 μm/min. In the second step, ultrasonic lapping using a copper disc was conducted, which reduced the residual surface defects with a high MRR of 6.11 μm/min. In the third step, ultrasonic CMP using a polyurethane pad was conducted, which achieved a smooth and less damaged surface with an MRR of 1.44 μm/h. These results suggest that the ultrasonic-assisted hybrid process can improve the precise machinability of SiC, which will hopefully achieve high-efficiency and ultra-precision machining.

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The mechanism of Fenton reaction of hydrogen peroxide with single crystal 6H-SiC substrate

Cited by 20 publications

References 41 publications

Cooperative Reaction of Hydrogen-Networked Water Molecules at the SiC–H₂O₂ Solution Interface: Microscopic Insights from Ab Initio Molecular Dynamics

Cooperative Reaction of Hydrogen-Networked Water Molecules at the SiC–H₂O₂ Solution Interface: Microscopic Insights from Ab Initio Molecular Dynamics

Investigation of oxidation mechanism of SiC single crystal for plasma electrochemical oxidation

Study on Improving the Precise Machinability of Single Crystal SiC by an Ultrasonic-Assisted Hybrid Process

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The mechanism of Fenton reaction of hydrogen peroxide with single crystal 6H-SiC substrate

Cited by 20 publications

References 41 publications

Cooperative Reaction of Hydrogen-Networked Water Molecules at the SiC–H2O2 Solution Interface: Microscopic Insights from Ab Initio Molecular Dynamics

Cooperative Reaction of Hydrogen-Networked Water Molecules at the SiC–H2O2 Solution Interface: Microscopic Insights from Ab Initio Molecular Dynamics

Investigation of oxidation mechanism of SiC single crystal for plasma electrochemical oxidation

Study on Improving the Precise Machinability of Single Crystal SiC by an Ultrasonic-Assisted Hybrid Process

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Cooperative Reaction of Hydrogen-Networked Water Molecules at the SiC–H₂O₂ Solution Interface: Microscopic Insights from Ab Initio Molecular Dynamics

Cooperative Reaction of Hydrogen-Networked Water Molecules at the SiC–H₂O₂ Solution Interface: Microscopic Insights from Ab Initio Molecular Dynamics