The mechanism of the asymmetric SET and RESET speed of graphene oxide based flexible resistive switching memories

Wang, Luhao; Yang, Wenjun; Sun, Qingqing; Zhou, Peng; Lu, Hong‐Liang; Ding, Shi‐Jin; Zhang, David Wei

doi:10.1063/1.3681366

Cited by 98 publications

(70 citation statements)

References 14 publications

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“…Currently, oxides, such as STO [15], HfO 2 [16], NiO [17], Al 2 O 3 [18], ZnO [19], and GO [20], have received much interest in resistive switching research. Among the oxides mentioned, HfO 2 has been profoundly studied and contains great potentiality to be put into applications.…”

Section: Introductionmentioning

confidence: 99%

High-performance bilayer flexible resistive random access memory based on low-temperature thermal atomic layer deposition

et al. 2013

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We demonstrated a flexible resistive random access memory device through a low-temperature atomic layer deposition process. The device is composed of an HfO2/Al2O3-based functional stack on an indium tin oxide-coated polyethylene terephthalate substrate. After the initial reset operation, the device exhibits a typical bipolar, reliable, and reproducible resistive switching behavior. After a 104-s retention time, the memory window of the device is still in accordance with excellent thermal stability, and a 10-year usage is still possible with the resistance ratio larger than 10 at room temperature and at 85°C. In addition, the operation speed of the device was estimated to be 500 ns for the reset operation and 800 ns for the set operation, which is fast enough for the usage of the memories in flexible circuits. Considering the excellent performance of the device fabricated by low-temperature atomic layer deposition, the process may promote the potential applications of oxide-based resistive random access memory in flexible integrated circuits.

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Section: Introductionmentioning

confidence: 99%

High-performance bilayer flexible resistive random access memory based on low-temperature thermal atomic layer deposition

et al. 2013

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“…Resistive random access memory (RRAM) is considered a promising candidate to replace a conventional charge-based memory owing to its simple structure, excellent scalability, and low power consumption [9][10][11]. GO based RRAM have been fabricated successfully which featured excellent characteristics [8,12]. Thus it makes it possible that logical and memory devices can be integrated on a same graphene-based platform.…”

Section: Introductionmentioning

confidence: 98%

The nano-scale resistive memory effect of graphene oxide

Wei

Zhou

Sun

et al. 2012

2012 IEEE Nanotechnology Materials and Devices Conference (NMDC2012)

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An attractive+ to graphene for a range of applications is graphene oxide (GO). GO is an insulator because of the hydroxyl, carboxyl, carbonyl and epoxide functional groups presenting on the basal surface or edge and becomes a semiconductor or semimetal as it is reduced back toward graphene. Here we demonstrate that graphene oxide can be reversibly reduced and oxidized in nanometer-scale by applying bias voltages by the nano-tip of conductive atomic force microscopy system. The low resistance state (LRS) when reduced and a high resistance state (HRS) when oxidized can be achieved under the opposite applied bias direction. The LRS (around 10 K and HRS (around 40 M ) were stable for more than 10 3 s, and no obvious degradation was observed during the tests. Threshold voltages for reduction and oxidation, which can be considered as the set and reset voltages is around -6.5 V and +7 V, respectively. It is shown that the hydrogen (H+) ions and hydroxyl ions (OH-) dissociated from the water meniscus formed between the tip and GO in ambient condition at room temperature plays an essential role in the resistive memory switching. It is also found that the negative bias is responsible for the reduction, which is related the transition from HRS to LRS, and the positive bias is responsible for the oxidation, which is related the transition from LRS to HRS, respectively. Raman spectroscopy and X-ray photoelectron spectroscopy is performed to confirm this resistive memory switching behaviors.

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“…So far, the resistive switching phenomenon, in which the resistance can be switched between a high resistance state (HRS) and a low resistance state (LRS) by electrical pulse, has been observed in many semiconducting and insulating materials including binary transition metal oxides [7][8][9][10][11], perovskite oxides [12][13][14], chalcogenides [15,16], sulfides [17], amorphous silicon [18], organic materials [19,20], and ferroelectric materials [21,22]. Accordingly, various models have been suggested to explain the resistive switching phenomenon, including the metal-insulator phase transition [14,23], the ferroelectric polarization [24][25][26], the conductive bridge constructed by the migration of localized metal atoms or defects [11,27], and the formation and elimination of conductive pathways induced by the external electric field [28]. However, the resistive switching mechanisms are still being debated [1,2].…”

Section: Introductionmentioning

confidence: 99%

Preparation and light-controlled resistive switching memory behavior of CuCr2O4

Sun

Jia

et al. 2015

J Sol-Gel Sci Technol

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In this work, CuCr 2 O 4 nanoparticles were successfully prepared by an improved hydrothermal process, and a resistive switching memory behavior with Ag/ CuCr 2 O 4 /fluorine-doped tin oxide structure is demonstrated. Specially, the resistive switching memory characteristics can be controlled by white-light illumination. The device can maintain superior stability over 100 cycles with an OFF/ON-state resistance ratio of about 10 3 at room temperature. This study is useful for exploring the promising light-controlled resistive switching memory device in the development of resistive switching randomaccess memory. Graphical Abstract We demonstrate a resistive switching device based on Ag/CuCr 2 O 4 /FTO structure, and the device shows light-controlled resistive switching memory characteristics.

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The mechanism of the asymmetric SET and RESET speed of graphene oxide based flexible resistive switching memories

Cited by 98 publications

References 14 publications

High-performance bilayer flexible resistive random access memory based on low-temperature thermal atomic layer deposition

High-performance bilayer flexible resistive random access memory based on low-temperature thermal atomic layer deposition

The nano-scale resistive memory effect of graphene oxide

Preparation and light-controlled resistive switching memory behavior of CuCr2O4

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