The metal-organic chemical vapor deposition and properties of III–V antimony-based semiconductor materials

Biefeld, R. M.

doi:10.1016/s0927-796x(02)00002-5

Cited by 129 publications

(98 citation statements)

References 228 publications

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“…The development of new organic aluminum source such as TMAA, TTBAl, EDMAA etc. is precisely in order to inhibit the serious C contamination problem [4][5]. Thus, growing AlSb and their multielement materials using MOCVD is the most challenging work in all the III-V epitaxial materials technologies.…”

Section: The Physical Properties and Preparation Technology Of Abcs Bmentioning

confidence: 99%

“…The first epitaxial growth of antimonides thin film materials using MOCVD was done by Manasevit and Simpson in 1969 who used TMGa and SbH 3 (stibine) source for growing GaSb films [4]. Different from epitaxial materials grown by MBE, The types of metallorganics have a critical influence on the quality of epitaxial materials grown by MOCVD.…”

Section: The Physical Properties and Preparation Technology Of Abcs Bmentioning

confidence: 99%

“…The unique band structure and excellent physical properties of ABCS based materials provide great freedom and flexibility for band engineering and structural design of materials and create a broad space for development of high-performance microelectronics, opto-electronic devices and integrated circuits. Applications could include active-array space-based radar, satellite communications, ultra-high-speed and ultra-low power integrated circuits, portable mobile devices, gas environmental monitoring, chemical detection, bio-medical diagnosis, drug analysis and other fields [1][2][3][4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

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Progress in Antimonide Based III-V Compound Semiconductors and Devices

Liu¹

2010

Engineering

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In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devices, and becomes a hot research area in many developed countries such as USA, Japan, Germany and Israel etc. Research progress in the preparation and application of ABCS materials, existing problems and some latest results are briefly introduced.

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Section: The Physical Properties and Preparation Technology Of Abcs Bmentioning

confidence: 99%

Section: The Physical Properties and Preparation Technology Of Abcs Bmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Progress in Antimonide Based III-V Compound Semiconductors and Devices

Liu¹

2010

Engineering

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“…This back− ground concentration stems from the oxygen and carbon contamination, which are strictly related to the chemistry of the aluminium precursor and its pyrolysis. Apart from TMAl (tri−methyl−aluminium), which is the ordinary pre− cursor for MOCVD, alternative precursors such as TTBAl (tri−tertiary−butyl−aluminium) and DMEAAl (di−methyl− −ethyl−amine−alane) have been proposed [15][16][17][18]. The aim of this work is to compare TMAl or DMEAAl as Al precur− sor for MOCVD of antimonide heterostructures.…”

Section: Introductionmentioning

confidence: 99%

Study of MOCVD growth of InGaAsSb/AlGaAsSb/GaSb heterostructures using two different aluminium precursors TMAl and DMEAAl

Wesołowski

Strupiński

Motyka

et al. 2011

Opto-Electronics Review

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The antimonide laser heterostructures growth technology using MBE epitaxy is currently well-developed, while MOVPE method is still being improved. It is known that the principal problem for MOVPE is the oxygen and carbon contamination of aluminium containing waveguides and claddings. The solution would be to apply a proper aluminium precursor. In this study we present the results of metal-organic epitaxy of In- and Al-containing layers and quantum well structures composing antimonide lasers devices. Special emphasis was put on the aluminium precursor and its relation to AlGaSb and AlGaAsSb materials properties. The crystalline quality of the layers grown with two different Al precursors was compared, very good structural quality films were obtained. The results suggested a substantial influence of precursors pre-reactions on the epitaxial process. The oxygen contamination was measured by SIMS, which confirmed its dependence on the precursor choice. We also optimised the GaSb substrate thermal treatment to deposit high quality GaSb homoepitaxial layers. Quaternary InGaAsSb layers were obtained even within the predicted miscibility gap, when arsenic content reached high above 10% values. InGa(As)Sb/AlGa(As)Sb quantum wells were grown and their optical properties were characterised by photoluminescence and photoreflectance spectroscopy. Type-I quantum wells showed a fundamental optical transition in the 1.9–2.1 μm range at room temperature. The epitaxial technology of the structures was subjected to an optimisation procedure. The investigated layers and heterostructures can be considered for application in laser devices.

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“…[1][2][3] Carrier transport is central to the operation of all such devices and measurement of carrier concentration and mobility is critical in determining the material quality and predicting device operational parameters. Single magnetic field Hall effect measurements are widely used to determine carrier concentration and mobility in semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Raman Spectroscopy Determination of Hole Concentration in p-Type GaSb

WS¹

2007

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Room temperature p-type GaSb bulk coupled mode spectra were measured as a function of hole concentration. These spectra were obtained using an optical system based on 752.55 nm excitation in order to obtain more sensitivity to bulk GaSb coupled mode scattering than possible with visible wavelength excitation-based systems. A relatively simple spectral model for the electronic contribution to the dielectric function was evaluated for determination of hole concentration from the bulk coupled mode spectra. Optically-derived values for hole concentration were determined by minimizing the sum of the residuals squared between an experimental and simulated spectrum as a function of total hole concentration and a plasmon damping parameter. Hole concentrations obtained from the Raman spectroscopic measurements deviated from the values determined from single field Hall effect measurements that were corrected to account for two band conduction by ≈20% to ≈65%. These deviations were attributed to the limitations of the spectral model employed and uncertainties in GaSb materials properties.

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The metal-organic chemical vapor deposition and properties of III–V antimony-based semiconductor materials

Cited by 129 publications

References 228 publications

Progress in Antimonide Based III-V Compound Semiconductors and Devices

Progress in Antimonide Based III-V Compound Semiconductors and Devices

Study of MOCVD growth of InGaAsSb/AlGaAsSb/GaSb heterostructures using two different aluminium precursors TMAl and DMEAAl

Raman Spectroscopy Determination of Hole Concentration in p-Type GaSb

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