A study on CeCh film growth on randomly oriented metallic substrate using Inclined Substrate Deposition (ISD) technique was performed in order to develop a biaxially aligned buffer layer for YBa2Cu3C>7_5 (YBCO) coated conductors. The influence of deposition parameters, as the substrate inclination angle a with respect to the CeC>2 vapor direction, deposition temperature and film thickness, on structural and morphological properties of the film was investigated. At substrate temperature between 200°C and 700°C a biaxial texture was observed for a ranging from 15° to 75°. The minimum value of the (|)-scan full width at half maximum (FWHM) on (002) poles of about 13.5° was obtained for film 2 Jim thick deposited at 200°C and 0^55°. Morphological analyses on cross-sectioned samples revealed a columnar structure, typical for this deposition technique, with spaced grains and a tile like surface.