The Multi-busbar Design: An Overview

Braun, Stefan; Hahn, Giso; Nissler, Robin; Pönisch, Christoph; Habermann, D.

doi:10.1016/j.egypro.2013.11.092

Cited by 48 publications

(19 citation statements)

References 5 publications

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“…The most dramatic impact on the module-centric design of metallization is when wire-based interconnection is implemented, such as the Smartwire or Multibusbar technologies [68]. Indeed, in these approaches, the distance between the interconnecting wires (between 15 and 30 per cell depending on the technology) is very short.…”

Section: New Interconnection and Impact On Metallizationmentioning

confidence: 99%

Summary of the 5th Workshop on Metallization for Crystalline Silicon Solar Cells

Beaucarne¹,

Schubert

Hoornstra

2015

Energy Procedia

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The 5 th Metallization Workshop took place in Constance, Germany on 20 and 21 October 2014 and provided an overview of research and development in the field of solar cell metallization. Enhanced understanding of contact structure and formation was obtained thanks to new characterization techniques. Great progress in metallization technologies was also reported. Screen printing technology is continuing its trajectory of continuous improvement, notably with fine-line screen printing (linewidth < 50 μm) becoming a reality. Ni/Cu plating technology is also progressing fast, with many of the technical barriers to adoption being successfully removed. Finally, the workshop also highlighted the move towards a module-centric design of solar cell metallization, targeting high performance and low cost at module level.

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Section: New Interconnection and Impact On Metallizationmentioning

confidence: 99%

Summary of the 5th Workshop on Metallization for Crystalline Silicon Solar Cells

Beaucarne¹,

Schubert

Hoornstra

2015

Energy Procedia

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“…Another way to achieve a more reliable Cu plating process is to remove the complication of having busbars on the cells by using a wire‐based cell interconnection method . As mentioned earlier in this section, the presence of busbars as well as fingers in the grid pattern can result in a non‐uniform plating rate across the cell that can be difficult to control .…”

Section: Challenges For Copper‐plated Silicon Solar Cellsmentioning

confidence: 99%

Challenges facing copper‐plated metallisation for silicon photovoltaics: Insights from integrated circuit technology development

Lennon

Colwell

Rodbell

2018

Progress in Photovoltaics

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Copper‐plated interconnects were widely adopted for volume manufacture of integrated circuits after more than a decade of intensive research to demonstrate that use of Cu would not impact device reliability. However, although Cu‐plated metallisation promises significantly reduced costs for Si photovoltaics, its adoption in manufacturing has not gained the same traction. This review identifies some key challenges facing the introduction of Cu‐plated metallisation for Si photovoltaics. These include the following: (1) increased carrier recombination due to the use of Cu for metal contact formation; (2) reduced module reliability due to adhesion or contact integrity failures; and (3) limited availability of cost‐effective processes and equipment for metal plating. For integrated circuits, Cu's low electrical resistance and high resistance to electromigration provided an impetus for the large investment in process development that was required to realise Cu‐plated interconnects. However, the technical advantages of using Cu for Si solar cell contacts are not as compelling, as solar cells can tolerate larger feature sizes thus reducing the criticality of the contact metal's conductivity and electromigration properties. Additionally, for Si photovoltaics, low cost is paramount, and new challenges arise from the need for modules to absorb light and operate in the field for 25+ years in diverse outdoor climates. However, with the scale of Si photovoltaic manufacturing expected to increase dramatically in the next decade, the use of large quantities of silver for cell metallisation will provide an incentive to address reliability concerns regarding the use of Cu for Si photovoltaic metallisation.

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“…The benefit of wire interconnection compared to the three-busbar (3BB) design has been published by Braun confirming an efficiency gain of 0.33 % absolute and a lower silver consumption of 50 % [1,[5][6][7]. Braun attributes the efficiency gain to improved module optics, due to the round shaped wires, and the shorter current paths in the finger metallization.…”

Section: Introductionmentioning

confidence: 98%