2006
DOI: 10.1039/b606661e
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The N-alkyldithiocarbamato complexes [M(S2CNHR)2] (M = Cd(ii) Zn(ii); R = C2H5, C4H9, C6H13, C12H25); their synthesis, thermal decomposition and use to prepare of nanoparticles and nanorods of CdS

Abstract: A series of N-alkyldithiocarbamato complexes [M(S2CNHR)2] (M=Cd(II), Zn(II); R=C2H5, C4H9, C6H13, C12H25) have been synthesised and characterized. The decomposition of these complexes to sulfates has been investigated, and a mechanism proposed. The structures of [Zn(S2CNHHex)2], [Cd(SO4)2(NC5H5)4)]n and [Cd(SO4)2(NC5H5)2(H2O)2)]n have been determined by X-ray single crystal method. The cadmium complex [Cd(S2CNHC12H25)2] and zinc complex [Zn(S2CNHC6H13)2] were used as single-source precursors to synthesize CdS … Show more

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Cited by 90 publications
(57 citation statements)
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“…Ligands properties of the metal complexes used as precursor could be used in the modification of the size and shape of the nanoparticles. For example, variation of the alkyl groups on the dithiocarbamate ligand was found to give particles with non-spherical morphologies [26]. In this paper, group 12 complexes of mixed alkyl-phenyl dithiocarbamate complexes have been used as single source precursors to prepare ZnS, CdS, and HgS semiconductor nanoparticles.…”
Section: Introductionmentioning
confidence: 99%
“…Ligands properties of the metal complexes used as precursor could be used in the modification of the size and shape of the nanoparticles. For example, variation of the alkyl groups on the dithiocarbamate ligand was found to give particles with non-spherical morphologies [26]. In this paper, group 12 complexes of mixed alkyl-phenyl dithiocarbamate complexes have been used as single source precursors to prepare ZnS, CdS, and HgS semiconductor nanoparticles.…”
Section: Introductionmentioning
confidence: 99%
“…The resultant thin films are of optoelectronic quality and exhibit a strong bandgap photoluminescence, with a line-width less than that of previously reported pulsed laser deposited CdS that is capable of acting as a lasing medium. [23] In order to investigate the process of semiconductor deposition in SCFs, we began by designing a simple hot-walled tubular reactor [24] containing a substrate stage for the deposition of CdS from the specially developed [25] precursor, [Cd{S 2 CN(C 6 H 13 ) 2 } 2 ]. Using this reactor it was possible to deposit thin films of hexagonal CdS, of near stoichiometry.…”
mentioning
confidence: 99%
“…The remaining residue (18.5%) are close to the values calculated (20.84%) for the mass percentage of NiS 2 . The NiS 2 was decomposed at higher temparature to give Ni with 11.7 percent of the total wieght of the complex (Caculated Ni percentage, 9.96%) that is similar to the dithiocarbamate complexes prepared with primary amines reported to date [10].…”
Section: Resultsmentioning
confidence: 99%
“…This fact may be because the complexes are not generally regarded as very stable or the dithiocarbamate acts as monodentate ligand. Recently, O'Brien and co-workers reported the preparation of Nalkyldithiocarbamato complexes of Cd and Zn and investigated their thermal decomposition and used to prepare nanoparticles and nanorods of CdS [10]. Also Caudle and co-workers reported the preparation of some N-alkyldithiocarbamato complexes of cadmium(II) and discussed mechanisms for the C-S bond cleavage [11].…”
Section: Introductionmentioning
confidence: 97%