Black phosphorus (BP), a van der Waals (vdW) layered material, has been intensively studied in recent years since the rediscovery of its thinâfilm form in 2014. It is considered as a promising material for midâinfrared (MIR) photodetection, due to its intrinsic narrow bandgap, tunable band properties, decent optical absorption, high roomâtemperature mobility, and high compatibility with siliconâbased technology. Here, the recent advances in the synthesis techniques, the novel optoelectronic properties, and applications of thinâfilm BP flake in MIR photodetection are reviewed. Over 17 synthesis techniques of BP films, as well as their merits and drawbacks, are summarized and discussed. The recently discovered strainâ, electricâfieldâ, and chemicalâdopingâinduced bandgap tuning effects in BP effectively extend its optical absorption cutoff wavelength into regime with longer wavelength (>4 ”m). In addition, the establishment of BPâbased vdW heterostructures paves a new way to design novel highâperformance MIR photodetectors. BP MIR photodetectors enabled by various photocurrent generation mechanisms (photoconductive, photogating, and photovoltaic effect) and device configurations (transistorâtype, waveguideâcoupled, Schottkyâjunctionâtype, and heterojunctionâtype devices) are summarized and compared.