The nature of nitrogen related point defects in common forms of InN

Abstract

A thermodynamic analysis of native point defect and dopant solubilities in zinc-blende III-V semiconductors

Room-temperature heteroepitaxy of single-phase Al1−xInxN films with full composition range on isostructural wurtzite templates

“…This is indicative of a transition towards material with generally poorer crystal quality with a larger degree of mosaic tilts/twists and with increasing amounts of lattice distortions [36]. Hydrostatic stress observed in III-nitride semiconductors has been attributed to the existence of point defects, such as interstitials, vacancies, anti-site occupation, and substitutions in the film, as reported in previous literature [45][46][47][48]. Indium-rich nitride alloys have previously been shown to be very sensitive to inclusion of point and structural defects [49].…”

“…Among point defects, the interstitials and anti-sites of indium at nitrogen positions can result in hydrostatic stress in the films. It has been shown that the interstitial nitrogen is dominant among those point defects in sputtered InN films [45,46]. In addition, the substitutions can contribute to structural defects when the elemental content of ternary alloys is within the miscibility gap.…”

How Indium Nitride Senses Water

“…of In-O. 19,20 The high-energy shoulder, peak 'ii', corresponds to OH groups -indicating significant amounts of dissociated H 2 O.…”

Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material

“…Nitrogen vacancies, V N , associated with dislocations, 3,4 unintentional impurities, such as H ͑Refs. 2 and 5-9͒ and O, 6,8 and complexes of In vacancies with N on the In-site 10 have been suggested as possible sources for the unintentional n-type doping in InN.…”