The Nature of Soft Mode and Ferroelectric Phase Transition in SbOxS1−xI and SbSexS1−xI Mixed Crystals

Audzijonis, A.; Žigas, L.; Gaigalas, Gediminas; Paulikas, V.; Žaltauskas, R.; Čerškus, Aurimas; Balnionis, D.

doi:10.1080/07315170490901382

Cited by 4 publications

(2 citation statements)

References 6 publications

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“…In this simplified unit cell we can distinguish a chain of atoms directed along the z(c)-axis. For this specific part of the chain transformed into a cycle by applying the Born-Kármán boundary conditions, we can apply the following expression for the dynamic matrix along the z(c)-axis (with the wave vector k = 0), which has the offdiagonal terms [13] 1 2…”

Section: Introductionmentioning

confidence: 99%

Investigation of the electronic structure of the SbSeI cluster

Audzijonis¹,

Žigas²,

Siroic³

et al. 2006

Physica Status Solidi (b)

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The energy levels of valence bands (VBs) and core levels (CLs) of SbSeI single crystals have been investigated theoretically. A molecular model of the SbSeI crystal was used for the calculations of VBs and CLs by the Hartree -Fock method (UHF). This molecular cluster consisting of 20 molecules was used for calculations of the total and of the averaged density of states including atom vibrations. The averaged total density of states is more similar to the experimental X-ray photoelectron spectra (XPS). The cluster-model calculations showed that the splitting of the CLs in SbSeI may be caused by photoelectron emission from the atoms at the surface which are in a different valence state.

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Section: Introductionmentioning

confidence: 99%

Investigation of the electronic structure of the SbSeI cluster

Audzijonis¹,

Žigas²,

Siroic³

et al. 2006

Physica Status Solidi (b)

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“…As established in [4] SbSeI has no ferroelectric phase transition in all temperature range. Static dielectric permittivity 0 ε of these crystals strongly depends on temperature [5].…”

Section: Introductionmentioning

confidence: 91%

Current mechanism in SbSeI crystals based on phonon‐assisted tunnelling emission

Audzijonis¹,

Sereika²,

Lapeika³

et al. 2007

Physica Status Solidi (b)

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Single crystals of SbSeI were grown by the vapour phase technique. Reverse current -voltage (I-V) characteristics of Ag/SbSeI/Ag system have been measured in the temperature range from 273 to 363 K. Analyses of experimental results are explained on the basis of phonon-assisted electron tunnelling from the local levels in the metal -crystal interface to the conduction band. Calculated values: electron -phonon interaction, depth of the trap and effective mass of the polaron enabled us to estimate the electron tunnelling probability.

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Sonochemical preparation of SbS1−Se I nanowires

Nowak

Kauch

Szperlich

et al. 2010

Ultrasonics Sonochemistry

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A sonochemical method for direct preparation of nanowires of SbS(1-x)Se(x)I solid solution has been established. The SbS(1-x)Se(x)I gel was synthesized using elemental Sb, S, Se and I in the presence of ethanol under ultrasonic irradiation (35kHz, 2W/cm(2)) at 50 degrees C for 2h. The product was characterized by using techniques such as powder X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, energy dispersive X-ray analysis, selected area electron diffraction, and optical diffuse reflection spectroscopy. The SEM and HRTEM investigations exhibit that the as-prepared samples are made up of large quantity nanowires with lateral dimensions of about 10-50nm and lengths reaching up to several micrometers and single-crystalline in nature. The increase of molar composition of Se affects linear decrease of the indirect forbidden optical energy gap as well as the distance between (121) planes of the SbS(1-x)Se(x)I nanowires.

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The Nature of Soft Mode and Ferroelectric Phase Transition in SbO_xS_1−xI and SbSe_xS_1−xI Mixed Crystals

Cited by 4 publications

References 6 publications

Investigation of the electronic structure of the SbSeI cluster

Investigation of the electronic structure of the SbSeI cluster

Current mechanism in SbSeI crystals based on phonon‐assisted tunnelling emission

Sonochemical preparation of SbS1−Se I nanowires

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