The NBTI Impact on RF Front End in Wireless Sensor Networks

Zhao, Bo; Wang, Yu; Yang, Huazhong; Wang, Hui

doi:10.1109/cas-ictd.2009.4960893

Cited by 7 publications

(4 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Understanding the specific parameters that degrade over time is crucial to modeling the effects of degradation on LNAs and VCOs. Time-dependent dielectric breakdown (TDDB), negative bias temperature instability (NBTI), and hot carrier injection (HCI) influence the performance of transistor-based devices 31 . Over time, the gate oxide of a transistor degrades due to high electric field stress caused by TDDB, leading to an increase in gate leakage current 32 .…”

Section: Methodsmentioning

confidence: 99%

“…Time-dependent dielectric breakdown (TDDB), negative bias temperature instability (NBTI), and hot carrier injection (HCI) influence the performance of transistor-based devices. 31 Over time, the gate oxide of a transistor degrades due to high electric field stress caused by TDDB, leading to an increase in gate leakage current. 32 These degradation mechanisms can lower device and subsystem performance.…”

Section: Degradation Modeling Of Critical Partsmentioning

confidence: 99%

See 1 more Smart Citation

Systematic prognostics framework development approach for a radar receiver

Kulevome,

Wang,

Zhao

et al. 2024

J. Appl. Rem. Sens.

View full text Add to dashboard Cite

Radar receivers are vital components in modern radar systems, and their reliable operation is crucial for accurate target detection and tracking. However, degrading receiver components can lead to reduced gain, increased noise levels, and decreased probability of detection affecting the overall radar performance. We present an efficient real-time prognostic framework for a radar receiver. The effect of the performance degradation of critical devices on the radar receiver is analyzed. A prognostic framework is developed based on the relationship between device health and receiver performance. Subsequently, an improved prognostic model based on the integration of Weibull distribution and long short-term memory network is developed and trained to accurately estimate the remaining useful life (RUL) of the receiver. Integrating survival analysis and deep learning techniques offers a robust solution for accurate RUL estimation, which can significantly enhance maintenance strategies. The proposed framework facilitates transitioning from traditional reactive maintenance practices to a predictive maintenance approach, thereby reducing downtime and improving the overall availability of radar receivers.

show abstract

Section: Methodsmentioning

confidence: 99%

Section: Degradation Modeling Of Critical Partsmentioning

confidence: 99%

Systematic prognostics framework development approach for a radar receiver

Kulevome,

Wang,

Zhao

et al. 2024

J. Appl. Rem. Sens.

View full text Add to dashboard Cite

show abstract

“…The authors concluded that HCI reduces the transconductance of transistors, leading to decrease of the gain of LNA and increase of the noise figure. The influence of NBTI on LNA and Voltage Controlled Oscillator (VCO) were reported in [11]. The above research shows that the performance The associate editor coordinating the review of this manuscript and approving it for publication was Nagendra Prasad Pathak.…”

Section: Introductionmentioning

confidence: 98%

Implementation of a Low Noise Amplifier With Self-Recovery Capability

et al. 2019

View full text Add to dashboard Cite

In this paper, an RF low noise amplifier (LNA) with self-recovery capability has been designed and implemented. A degradation model of hot carrier injection (HCI) of n-channel MOSFETs is proposed to simulate the aging process of the RF circuits, and a method for monitoring the HCI degradation in the RF circuits has been developed. Self-recovery mechanism of the LNA is triggered automatically by monitoring the HCI degradation to compensate for the HCI degradation. With the self-recovery capability, the LNA can maintain its performance under HCI stress over time. The proposed LNA has been fabricated with a 0.13µm CMOS technology and the self-recovery capability has been experimentally demonstrated.

show abstract

“…However, some significant work also addresses analog circuit performance degradation. A very little attention, however, has been paid to radio-frequency circuits [5][6][7][8]. However, no dedicated study has been done on the performance degradation of a LNA in an advanced technology node such as 28nm.…”

Section: Introductionmentioning

confidence: 99%

Impact of transistor aging on RF low noise amplifier performance of 28nm technology: Reliability assessment

Mahato

Gielen

2013

2013 IEEE 20th International Conference on Electronics, Circuits, and Systems (ICECS)

View full text Add to dashboard Cite

Transistor reliability has become one of the major concerns in reliable circuit design in advanced CMOS nanometer technology. Transistor aging can have a significant impact on the performance of the RF frontend circuits. In this paper, the impacts of transistor aging on a RF low noise amplifier (LNA) are studied. In this work, single-ended cascode LNA with source inductive degeneration and LC folded-cascode LNA test circuits are used to study the transistor aging effect. The noise figure (NF) and the gain, critical performance parameters of a LNA are shown to be degradation-sensitive. It is shown that the noise figure of the LNA is significantly increased and the gain of the LNA is decreased by the aging effect using a 28nm technology. The optimum gate bias point and the cascode structure have been shown as design guidelines to make the LNA more reliable.I.

show abstract

The NBTI Impact on RF Front End in Wireless Sensor Networks

Cited by 7 publications

References 12 publications

Systematic prognostics framework development approach for a radar receiver

Systematic prognostics framework development approach for a radar receiver

Implementation of a Low Noise Amplifier With Self-Recovery Capability

Impact of transistor aging on RF low noise amplifier performance of 28nm technology: Reliability assessment

Contact Info

Product

Resources

About