The new AlPdRe icosahedral phase: Towards universal electronic behaviour for quasicrystals?

Berger, Claire; Grenet, T.; Lindqvist, Peter; Lanco, P.; Grieco, J.C.; Fourcaudot, G.; Cyrot‐Lackmann, F.

doi:10.1016/0038-1098(93)90543-v

Cited by 43 publications

(25 citation statements)

References 14 publications

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“…In 1993 another breakthrough was the discovery of AlPdRe which had resistivities in the range of 10 6 µΩcm [17][18][19][20][21][22][23], although the DOS still has a metallic character. This material displays a strong decrease of the conductivity when the temperature is reduced and the conductivity value can fall below 1 (Ωcm) −1 at 4 K. Although the behavior depends strongly on the composition and the preparation of the sample, many authors [17][18][19][20][21][22][23] reported that AlPdRe quasicrystal are very close to the metal-insulator transition.…”

Section: Conductivity: Close To Metal-insulator Transitionmentioning

confidence: 99%

Electronic transport in AlMn(Si) and AlCuFe quasicrystals: Breakdown of the semiclassical model

Laissardière¹,

Julien²,

Mayou³

2008

Philosophical Magazine

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The semi-classical Bloch-Boltzmann theory is at the heart of our understanding of conduction in solids, ranging from metals to semiconductors. Physical systems that are beyond the range of applicability of this theory are thus of fundamental interest. It appears that in quasicrystals and related complex metallic alloys, a new type of break-down of this theory operates. This phenomenon is related to the specific propagation of electrons. We develop a theory of quantum transport that applies to a normal ballistic law but also to these specific diffusion laws. As we show phenomenological models based on this theory describe correctly the anomalous conductivity in quasicrystals. Ab-initio calculations performed on approximants confirm also the validity of this anomalous quantum diffusion scheme. This provides us with an ab-initio model of transport in approximants such as α-AlMnSi and AlCuFe 1/1 cubic approximant.

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Section: Conductivity: Close To Metal-insulator Transitionmentioning

confidence: 99%

Electronic transport in AlMn(Si) and AlCuFe quasicrystals: Breakdown of the semiclassical model

Laissardière¹,

Julien²,

Mayou³

2008

Philosophical Magazine

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“…The insulatorlike behavior of the icosahedral phase (i-phase) such as seen in the i-AlPdRe [1][2][3][4] has been a challenging puzzle for modern physics. The experimental results suggest the proximity of the metal-insulator transition is due to the presence of localized states at the Fermi level (E F ).…”

mentioning

confidence: 99%

“…However, until now the question as to the origin of such localized states, whether it is due to the long-range quasiperiodicity or to the local structural environment or to some kind of structural disorder, has not been fully answered yet. On the other hand, the role of the d orbitals in the electronic transport is supposed to be of significance [5], since very high resistivity and its strong temperature variation have been observed only in i-phases containing transition metal (TM) atoms [6], such as i-AlCuTM (TM Fe, Ru, Os) [7,8] and i-AlPdTM (TM Mn, Re) [1][2][3]9]. In such quasicrystals the d band of the TM atoms lies close to E F and, as a consequence, strong resonance between the d and sp orbitals near E F is expected, which would give rise to resistivity to a substantial extent.…”

mentioning

confidence: 99%

Composition-Dependent Electrical Resistivity in an Al-Re-Si 1/1-Cubic Approximant Phase: An Indication of Electron Confinement in Clusters

2001

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We report the synthesis of alpha-AlReSi and show that it is a 1/1-cubic approximant phase of the icosahedral quasicrystal with a = 12.9 A. The trend of the resistivity of the new approximant phase shows a nonmetallic character, similar to those seen in the stable icosahedral phases. The resistivity depends sensitively on the Re concentration and the nonmetallic transport is observed only at the Re concentration close to 17.4 at. %, where the transition metal sites in the icosahedral cluster are exclusively occupied by Re atoms. In view of a recent ab initio calculation, the present result suggests strongly the formation of the virtual bound states, or confinement of electrons, in the icosahedral clusters of transition metal atoms.

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“…Fabrication of ingots [13][14][15][16][17] and ribbons [13,18,19] starts with arc-melting an ingot, containing the desired proportion of Al, Pd and Re, as homogeneously as possible. The ingot then can be cut in small bars of typical size 1mm × 1mm × 5mm (called "ingots"), or melt-spun into ribbons of typical size 20µm × 1mm × 5mm.…”

Section: The Different Types Of I-alpdre Samplesmentioning

confidence: 99%

The question of intrinsic origin of the metal-insulator transition in i-AlPdRe quasicrystal

Delahaye

Berger

2015

Eur. Phys. J. B

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The icosahedral (i-) AlPdRe is the most resistive quasicrystalline alloy discovered so far. Resistivities (ρ) of 1Ωcm at 4K and correlated resistance ratios (RRR = ρ4K /ρ300K ) of more than 200 are observed in polycrystalline samples. These values are two orders of magnitude larger than for the isomorphous i-AlPdMn phase. We discuss here the controversial microscopic origin of the i-AlPdRe alloy electrical specificity. It has been proposed that the high resistivity values are due to extrinsic parameters, such as secondary phases or oxygen contamination. From comprehensive measurements and data from the literature including electronic transport correlated with micro structural and micro chemical analysis, we show that on the contrary there is mounting evidence in support of an origin intrinsic to the i-phase. Similarly to the other quasicrystalline alloys, the electrical resistivity of the i-AlPdRe samples depends critically on minute changes in the structural quality and chemical composition. The low resistivity in i-AlPdRe single-grains compared to polycrystaline samples can be explained by difference in chemical composition, heterogeneity and thermal treatment.

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The new AlPdRe icosahedral phase: Towards universal electronic behaviour for quasicrystals?

Cited by 43 publications

References 14 publications

Electronic transport in AlMn(Si) and AlCuFe quasicrystals: Breakdown of the semiclassical model

Electronic transport in AlMn(Si) and AlCuFe quasicrystals: Breakdown of the semiclassical model

Composition-Dependent Electrical Resistivity in an Al-Re-Si 1/1-Cubic Approximant Phase: An Indication of Electron Confinement in Clusters

The question of intrinsic origin of the metal-insulator transition in i-AlPdRe quasicrystal

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