The non equilibrium band model of silicon in TMAH and in anisotropic electrochemical alkaline etching solutions

Nemirovsky, Y.; El-Bahar, A.

doi:10.1016/s0924-4247(98)00277-5

Cited by 13 publications

(8 citation statements)

References 23 publications

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“…According to Nemirovsky and El-Bahar [34], the measured OCP is a 'mixed potential' which is controlled kinetically by the rates of two electrode reactions occurring simultaneously at the Si/TMAH interface. At the OCP, these reactions, given below, occur at the same rate, resulting in zero current: where e − cb are conduction band electrons.…”

Section: Discussionmentioning

confidence: 99%

Effects of chemical pre-treatments on the etching process of p(100) Si in tetra-methyl ammonium hydroxide solution

Conway

Cunnane²

2001

J. Micromech. Microeng.

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An electrochemical approach has been used to study the influence of chemical pre-treatments on the etching characteristics of p-Si(100) in 5.0 wt% tetra-methyl ammonium hydroxide (TMAH) at two distinct temperatures. Linear sweep voltammetry was employed to monitor how various parameters altered with increased etching time. A new type of surface roughness indicator was used to determine the 'surface roughness' as a function of etching time. A similar steady-state 'surface roughness' value was reached for all chemical treatments. Ex situ atomic force microscopy was employed to confirm the differences in surface morphology for the distinct types of chemical pre-treatments. Results showed that both the etching characteristics and final etched structure of p(100) Si in TMAH depended on the initial state of the surface (whether it was hydrophilic or hydrophobic). In particular, increased surface roughening, after short etching times in TMAH, could be related to the increased wetting ability of the initial surface. Also, a rougher surface was produced at a higher temperature. This unexpected result is explained in terms of the non-catalytic role of the tetra-methyl ammonium cation during oxide dissolution.

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Section: Discussionmentioning

confidence: 99%

Effects of chemical pre-treatments on the etching process of p(100) Si in tetra-methyl ammonium hydroxide solution

Conway

Cunnane²

2001

J. Micromech. Microeng.

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“…To further understand the behavior of compound technique, it is necessary to simulate the temperature distributions of siliconsolution interfaces by laser heating and calculate the etching rates The temperature profiles in the heated silicon and in the ambient electrolyte were calculated using one-dimensional equations of the Fourier's heat conduction as follows [10,11]:…”

Section: Theoretical Analysismentioning

confidence: 99%

Excimer laser electrochemical etching n-Si in the KOH solution

Long

Shi

Xiong

2010

Optics and Lasers in Engineering

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“…The measured open-circuit potential (OCP) 1 is a 'mixed potential' which is controlled kinetically by the rates of two electrode reactions occurring simultaneously at the Si/TMAH interface [10]. At OCP, these reactions, given below, occur at the same rate, resulting in zero current:…”

Section: Introductionmentioning

confidence: 99%

Electrochemical characterization of Si in tetra-methyl ammonium hydroxide (TMAH) and TMAH:Triton-X-100 solutions under white light effects

Conway

Cunnane

2002

J. Micromech. Microeng.

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An experimental study of the electrochemical characteristics of the silicon/tetra-methyl ammonium hydroxide (TMAH) junction under dark and white light conditions are investigated for both n- and p-type Si. The presence of Triton-X-100 (TX100) in the TMAH solution under white light conditions is also studied. Cyclic voltammetry (CV) and ex situ atomic force microscopy (AFM) are employed to study the white light effects on the etching characteristics of silicon in TMAH and TMAH:TX100. It was found that the passivation peak potential shifted significantly for both n- and p-type Si under white light conditions. The positions of the flatband potential for n- and p-type Si were predicted by CV under illumination. Finally, etch rate studies and preliminary surface roughness measurements were performed on p(100) Si in TMAH under both dark and white light conditions. These latter studies concluded that a reduction in the vertical surface roughness occurred in the presence of white light.

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The non equilibrium band model of silicon in TMAH and in anisotropic electrochemical alkaline etching solutions

Cited by 13 publications

References 23 publications

Effects of chemical pre-treatments on the etching process of p(100) Si in tetra-methyl ammonium hydroxide solution

Effects of chemical pre-treatments on the etching process of p(100) Si in tetra-methyl ammonium hydroxide solution

Excimer laser electrochemical etching n-Si in the KOH solution

Electrochemical characterization of Si in tetra-methyl ammonium hydroxide (TMAH) and TMAH:Triton-X-100 solutions under white light effects

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