2021
DOI: 10.1109/tdmr.2021.3102105
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The Novel Structure to Enhancement Ion /Ioff Ratio Based on Field Effect Diode

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Cited by 9 publications
(2 citation statements)
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“…Its advantage lies in its relatively better photoresponse in short wavelengths. However, due to the presence of ohmic contacts, this configuration may exhibit higher dark currents and lower device sensitivity as well as slower response speeds [84].…”
Section: Czt Detector Structurementioning
confidence: 99%
“…Its advantage lies in its relatively better photoresponse in short wavelengths. However, due to the presence of ohmic contacts, this configuration may exhibit higher dark currents and lower device sensitivity as well as slower response speeds [84].…”
Section: Czt Detector Structurementioning
confidence: 99%
“…To overcome some challenges related to dark current, k ratio value, complex multilayer deposition processes, and the power consumption associated with high reverse bias voltages, this work introduces a novel structure known as the field effect avalanche photodiode (FE-APD). The FE-APD structure combines a conventional pin-photodiode with a field effect diode [ 13 ], comprising a diode and planar SOI-MOSFET [ 14 ]. It also integrates a multiplication layer to enhance its performance.…”
Section: Introductionmentioning
confidence: 99%