The observation of trapping and detrapping effects in high-k gate dielectric MOSFETs by a new gate current Random Telegraph Noise (IG-RTN) approach

Abstract

A new method, called gate current Random Telegraph Noise (I G RTN), was developed to analyze the oxide quality and reliability of high-k gate dielectric MOSFETs. First, a single electron trapping/detrapping from process induced trap in nMOSFET was observed and the associated physical mechanism was proposed. Secondly, I G RTN has also been successfully applied to differentiate the difference in electron tunneling mechanism for a device under high-field or low-field stress. Finally, the softbreakdown (SBD) behavior of a device can be clearly identified. Its I G RTN characteristic is different from that before soft-breakdown. It was found that SBD will indeed induce extra leakage current as a result of an additional breakdown path.

Investigation of Random Telegraph Noise in the Dark Current of Germanium Waveguide Photodetector

“…Since the slope of the ln(τ c /τ e ) versus reverse bias curve was positive as shown in Fig. 8, the trap was concluded to be near the interface between the N ++ and the intrinsic region [10]. Because the carriers in the N ++ region would be collected before they recombined at recombination centers and would not be trapped, the trap was concluded to be in the intrinsic region.…”

“…Particularly, in the lower dark current situation, the fluctuations may become relatively larger, and therefore, become even more important to the stability of the photodetector. As a source of time dependent variations, random telegraph noise (RTN) has been studied in MOSFETs [10]- [13]. The fluctuations of the current are due to the trapping and detrapping effects of a carrier from a single trap.…”

Investigation of capture and emission dependence between individual traps from complex random telegraph signal noise analysis

“…Recently, the gate current RTS noise from high-k gate dielectric MOSFETs has been reported [11,13]. The time of high current state is c and the low current state is e on gate current RTS noise that is the same as the drain current RTS noise [11]. For the proposed analysis method, the signal was processed and shown in Fig.…”

Extraction of trap energy and location from random telegraph noise in gate leakage current (Ig RTN) of metal–oxide semiconductor field effect transistor (MOSFET)

“…Recently, study on the random telegraph noise in gate leakage current (I g RTN) has been drawing attention because gate current is more sensitive to oxide volume traps than drain current at ultra thin gate oxide or high-k gate dielectric [8][9][10][11][12][13]. I g RTN has been observed in the MOSFET devices biased in accumulation [11,12] as well as inversion.…”