The Orientation Dependence of the Electron Backscattering Coefficient of Gold Single Crystal Films

Drescher, H; Krefting, E. R.; Reimer, Ludwig; Seidel, Hauke

doi:10.1515/zna-1974-0601

Cited by 28 publications

(29 citation statements)

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“…The universal formula (19) for expressing in the angle range of 0-80 and the energy range of 10-102 keV using , 0 , n, z, m , W p0 , and was also successfully determined in this study. theoretical values at 11.0keV experimental values at 11.0keV [12] theoretical values at 25.2keV experimental values at 25.2keV [12] theoretical values at 13.4keV experimental values at 13.4keV [12] theoretical values at 11.0keV experimental values at 11.0keV [12] theoretical values at 41.5keV experimental values at 41.5keV [12] theoretical values at 13.4keV experimental values at 13.4keV [12] theoretical values at 81.8keV experimental values at 81.8keV [12] theoretical values at 41.5keV experimental values at 41.5keV [12] theoretical values at 102keV experimental values at 102keV [12] 90 80 70 60 50 40 30 20 10 theoretical values at 81.8keV experimental values at 81.8keV [12] theoretical values at 62.1keV experimental values at 62.1keV [12] theoretical values at 102keV experimental values at 102keV [12] …”

Section: Discussionmentioning

confidence: 73%

Universal Formula for Secondary Electron Yield of Metals at High Electron Energy and Incident Angle θ

Xie

Zhang

Wang

2011

Jpn. J. Appl. Phys.

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On the basis of the main physical processes of secondary electron emission, the relationships among the incident energy (W p0 ) of primary electrons, the number of secondary electrons ( PE ) released per primary electron entering the metal at high electron energy and incident angle and incident angle () are deduced. In addition, the relationship between the number of secondary electrons ( PE0 ) released per primary electron entering the metal at ¼ 0 and W p0 is determined. From the experimental results, the relationships among the ratio (the subscript means the primary electron is incident at in this paper), the ratio at ¼ 0 ( 0 ) and are obtained. On the basis of relationships among PE , PE0 , , 0 , backscattered coefficient , backscattered coefficient at ¼ 0 ( 0 ), secondary electron yield , and secondary electron yield at ¼ 0 ( 0 ), the universal formula for expressing using 0 , , 0 , and is deduced. The secondary electron yield calculated from this universal formula and the yields measured experimentally from aluminum and copper are compared. The results suggest that the proposed formula is universal for the estimation of secondary electron yields in the angle range of 0-80 and the energy range of 10-102 keV.

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Section: Discussionmentioning

confidence: 73%

Universal Formula for Secondary Electron Yield of Metals at High Electron Energy and Incident Angle θ

Xie

Zhang

Wang

2011

Jpn. J. Appl. Phys.

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“…In addition to its high efficiency, the delta-doped CCD also has the capability to image lowenergy particles, which may prove valuable in energy-selective particle detector applications. e Si Experimental (Drescher, 1970) ............ _ Si, Tneory (Staub, 1994) D Al Experimental (Drescher, 1970) ----Al, Theory (Staub, 1994) • Al, Experimental (Darlington, 1972) • …”

Section: S Discussionmentioning

confidence: 99%

Low-energy electron detection with delta-doped CCDs

Nikzad

Smith

Elliott

et al. 1997

Solid State Sensor Arrays: Development and Applications

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Delta-doped CCDs have achieved stable quantum efficiency, at the theoretical limit imposed by reflection from the Si surface in the near UV and visible. In this approach, an epitaxial silicon layer is grown on a fully-processed CCD using molecular beam epitaxy. During the silicon growth on the CCD, 300/o of a monolayer of boron atoms are deposited nominally within a single atomic layer, resulting in the effective elimination of the backside potential well.In this paper, we will briefly discuss delta-doped CCDs and their application of to low-energy electron detection. We show that modification of the surface this way can greatly improve sensitivity to low-energy electrons. Measurements comparing the response of delta-doped CCDs with untreated CCDs were made in the 50 eV-1.5 keV energy range. For electrons with energies below 300 eV, the signal from untreated CCDs was below the detection limit for our apparatus, and data are presented only for the response of delta-doped CCDs at these energies. The effects of multiple electron hole pair (EHP) production and backscattering on the observed signals are discussed. LOW-ENERGY PARTICLE DETECTION AND CCDsImaging systems for low-energy particles generally involve the use of microcbannel plate electron multipliers followed by position sensitive solid state detectors, or phosphors and position sensitive photon detectors. These systems work well and can process up to 106 electrons/sec., however, the spatial resolution of these compound systems is considerably less than that of a directly imaged charge-coupled device (CCD). Also, these systems have difficulties with gain stability and they require high voltages. The present large format of CCDs, up to 4000x4000 pixels, could represent a major advance for the imaging of low energy particles. CCDs exhibit a highly linear response which is advantageous for quantitative detection applications. The full well capacity of buried channel CCDs corresponds to a collected electron density of about 10 11 electrons/cm 2 , which together with the low readout noise, gives CCDs a large dynamic range.Frontside illumination of CCDs makes radiation of low penetration depth undetectable, because incident radiation is required to penetrate the CCD po;ycrystalline Si gates (-5000 A),. One attempt to eliminate this problem involves turning the chip around in order to illuminate from the back side, thus eliminating attenuation due to the CCD processed layers.Backside illumination requires removal of the thick p+ substrate in order to bring the exposed back surface in close proximity to the intended frontside potential well. However, thinning the CCD by chemically removing the substrate is not sufficient to obtain high quantum efficiency, because positive charge in the native oxide traps electrons generated near the back surface of the CCD. Termination of a Si surface with Si(h leads to depletion of carriers at the surface, and in p-type Si the band bending due to surface depletion serves to create a surface potential well for electrons. Thi...

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“…2 we fitted experimental values for Po (15) to a Lambert distribution and for PE (15,16) to a generalized Lorentzian (17). v (Au; 100 keV) = 0.513 is also known from measurements (18).…”

Section: Methodsmentioning

confidence: 98%

Inactivation of catalase monolayers by irradiation with 100 keV electrons.

Hahn¹,

Seredynski²,

Baumeister³

1976

Proc. Natl. Acad. Sci. U.S.A.

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A catalase monolayer adsorbed on a layer of arachidic acid deposited on a solid support was irradiated with 100 keV electrons simulating the conditions of electron microscopic imaging. Effective doses were calculated taking into account the angular and energy distribution of backscattered electrons. Enzymatic inactivation was chosen as the criterion for damage and was monitored by a rapid and quantifiable but nevertheless sensitive assay. Dose-response curves revealed that inactivation is a one-hit-multiple-target phenomenon, which is consistent with biochemical evidence for a cooperative function of subunits. The experimentally determined target size coincides fairly well with both calculated cross sections for inelastic interactions based on the atomic composition of catalase and with calculated cross sections for ionizing events based on the chemical bonds involved. This legitimates both types of calculations even for complex biomolecules. Macromolecules and supramolecular assemblies are subject to substantial structural alterations when exposed to the unfavorable conditions in the electron microscope. Theoretical considerations (1) as well as experimental investigations (for review see ref.2) led to the suspicion that radiation-induced deteriorations of the molecular structure might fundamentally limit the resolution to which reliable structural information can be obtained. The degree of structural alteration is a function of the radiation sensitivity of the specimen under investigation and of the electron dose deposited on it, which in turn is defined by the wanted resolution (3, 4). Subtle structural alterations which can be neglected at moderate resolution levels become increasingly important with increasing resolution.The complexity of the phenomena associated with radiation damage of proteins or biomolecules in general made it impossible to formulate inductively a universal theory of the damaging process (for reviews see refs. 5-7) which could define or even predict the kind and degree of structural alterations following the fairly well understood physical interaction between the beam electrons and the specimen atoms. For essentially the same reason it is impossible to trace back on a theoretical basis to the original undisturbed structure of a protein from micrographs with manifest deteriorations.To evaluate realistic perspectives for "molecular microscopy" it seems necessary to measure quantitatively the electron doses causing distinct structural deterioration in various molecular species of biological relevance and under experimental conditions simulating the hazards of electron microscopical imaging. Hitherto, radiation damage was often measured by determining the dose that caused fading of distinct spots of the electron diffraction pattern. Unfortunately, this method is confined to crystalline specimens and, moreover, the situation of a molecule in a crystal need not necessarily reflect its reaction to ionizing radiation in a noncrystalline state. Organized monolayer systems assembled in a ...

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The Orientation Dependence of the Electron Backscattering Coefficient of Gold Single Crystal Films

Cited by 28 publications

References 0 publications

Universal Formula for Secondary Electron Yield of Metals at High Electron Energy and Incident Angle θ

Universal Formula for Secondary Electron Yield of Metals at High Electron Energy and Incident Angle θ

Low-energy electron detection with delta-doped CCDs

Inactivation of catalase monolayers by irradiation with 100 keV electrons.

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