The Origin and Properties of New Extended Defects Revealed by Etching in Plastically Deformed Si and SiGe

Structure and recombination properties of extended defects in the dislocation slip plane in silicon

“…1 and 2, respectively. The images show, that the trails consist of rows of extended defects revealed as a short segments [5]. A visible recombination contrast (~3%) associated with dislocation trails is seen in Figs.…”

“…These etchants were found to be effective for different Si crystal surfaces. The main advantage of S and DS solutions is the www.pss-c.com possibility to reveal both dislocation etch pits and other extended defects in the same process [5]. After selective etching the specimens were examined by means of Nomarski differential interference microscopy.…”

“…Moreover, it was found, that the defects stretch along all path of dislocation. As a rule, the defects behind the individual dislocations revealed by etching are very long homogeneous ridges [4,5]. However, they could be cut into short segments and are often very dispersed when a few glide systems are operating.…”

“…However, the numerous experimental data show that the electrical as well as optical properties of deformed crystals are mainly determined by point defects located rather far from dislocations [1][2][3]. The most part of such defects is located in the dislocation trails [4][5][6] and their electrical activity can be studied in the Electron Beam Induced Current (EBIC) mode and by the Deep Level Transient Spectroscopy (DLTS) [6]. As preliminary studies, some elements of their morphology and properties were considered in [5].…”

“…The most part of such defects is located in the dislocation trails [4][5][6] and their electrical activity can be studied in the Electron Beam Induced Current (EBIC) mode and by the Deep Level Transient Spectroscopy (DLTS) [6]. As preliminary studies, some elements of their morphology and properties were considered in [5]. In this contribution we tried to carry out a complete comparative analysis of the defects morphology and the recombination activity directly in the slip plane by the optical and EBIC techniques.…”