The specific features of the dislocation structure, occuring in the vicinity of indentations have been studied using Si single crystals under different conditions of deformation (at temperatures of 20 to 700 °C and loadings of 0.5 to 10 p). It is shown, that the deformation of crystals at temperatures of 350 to 650 °C results in twin formation with {111} twinning plane. Flat defects with {115} habit plane are revealed. They are shown to be platelets of a new phase, which is of the hexagonal structure with c = 6.31 Å and a = 3.86 Å. The possible mechanism of the phase transformation is discussed.

The properties of regions swept by a moving dislocation in silicon crystals are experimentally studied. The peculiarities of forming traces of various types behind dislocations observed by electron microscopy and chemical etching are investigated. These traces are found to arise as result of point defect redistribution by moving dislocations and change in their structural state in a volume swept by a dislocation. It is shown that the processes mentioned enable the slip plane to assume properties of a specific two‐dimensional defect responsible for the appearance of the new mechanism of a charge carrier mobility anisotropy in the plastically deformed crystals.

It is shown that the starting stresses for dislocation glide and their electrical activity are determined by the temperature, dislocation velocity, and distance moved upon bringing them to the starting position and, also, on the sample cooling rate after deformation. A correlation between starting stresses and dislocation donor center concentration is observed. It is shown that the result obtained is determined by the formation of complicated centers in the impurity atmospheres of both, mobile and immobile dislocations. nOKa3aH0, YTO CTapTOBbIe HaIIpH)XeHHH HJIH ABIIMeHIIH HHAMBUnYanbHbIX AMaOKaqHfi U MX 3JIeKTpUYeCKaH aKTHBHOCTb OIIpeAeJIHIoTCH TeMnepaTmOfi KPHCTaJIJIa, CKOPOCTbIo W AJIHHOfi IIpOtiAeHHOrO AMCJIOKaIlHfiMU IIyTII npH BbIBeHeHHU IIX B CTapTOBOe IIOJIO-06aapymeaa KOppeJIH~HH Me?KAy 3HaYeHHRMH CTaPTOBbIX HaIIpHmeHUfi II KOHIleHTpa-OIIpeHenRIoTCH 06pa30BaHMeM CJIOXHblX UeHTPOB B IIPUMeCHbIX aTMOC@epaX KaK HBM-meaue, a Tmme C K O~O C T~~I O oxnamneam o6pawa nocne nnacTmecKot ne@opMauHu. unet AucnoKamomibrx ~O H O P H W X UempoB. n o~a 3 a~0 , m o nonysemme p e 3 y n f i~a~~ ~( y~l z u x c~, TaK u HenonsumHMx nHcnoxaqafi.

No abstract

It is shown, that moving 60º dislocations in Si as well as in SiGe generate high density of extended defects in their slip plane. As a result, the plastic deformation introduces in the crystal volume in addition to the dislocations a very dense system of extended defects, spatially separated from dislocations. The EBIC imaging revealed strong recombination contrast associated with these extended defects.