The effect of thermal treatment on the electrical activity and mobility of dislocations in Si

Bondarenko, I. E.; Eremenko, V. G.; Никитенко, В. И.; Yakimov, E. B.

doi:10.1002/pssa.2210600202

Cited by 46 publications

(16 citation statements)

References 20 publications

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“…Instead, it seems that in crystals with a high oxygen content, the concentration of dislocation related centers increases compared to FZ-Si samples or to Cz ones with a lower oxygen content. Thus, as shown in [8], dislocations can gather oxygen during their gliding through the crystal, even at temperatures as low as 600 C. Thus, oxygen could affect the formation of electrical and optical properties of dislocations. As shown in [14], dislocations after having covered a short distance are inactive, and for the formation of a conventional dislocation DLTS spectrum they should glide a distance, much shorter in Cz than in FZ-Si.…”

Section: Discussionmentioning

confidence: 96%

“…However, the effect of oxygen has been the object of less attention although it is one of the most important impurities in Si. Nevertheless, it has been demonstrated that oxygen reduces the dislocation mobility [7] and leads to the formation of a starting stress [7,8]. It was shown [8] that oxygen can be gathered by moving dislocations even at 600 to 700 C and that its concentration in the dislocation atmosphere depends on the oxygen content as well as on the parameters of dislocation motion.…”

Section: Introductionmentioning

confidence: 98%

“…Nevertheless, it has been demonstrated that oxygen reduces the dislocation mobility [7] and leads to the formation of a starting stress [7,8]. It was shown [8] that oxygen can be gathered by moving dislocations even at 600 to 700 C and that its concentration in the dislocation atmosphere depends on the oxygen content as well as on the parameters of dislocation motion. The dislocation recombination activity measured by EBIC [9] or LBIC [10] (Electron/Light Beam Induced Current, respectively) was found to depend on the interstitial oxygen content [O i ] of the sample.…”

Section: Introductionmentioning

confidence: 98%

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Oxygen Effect on Electrical and Optical Properties of Dislocations in Silicon

Feklisova

Mariani-Regula²,

Pichaud

et al. 1999

phys. stat. sol. (a)

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Section: Discussionmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 98%

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Oxygen Effect on Electrical and Optical Properties of Dislocations in Silicon

Feklisova

Mariani-Regula²,

Pichaud

et al. 1999

phys. stat. sol. (a)

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“…On the other hand the creation of donors in the vicinity of dislocations has been reported in Ref. [20]. It is important that these donors were more stable than usual TDs.…”

Section: Introductionmentioning

confidence: 95%

Influence of oxygen on the dislocation related luminescence centers in silicon

Steinman

2005

phys. stat. sol. (c)

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Dislocation related luminescence (DRL) centres in Si have high stability to a thermal treatment of samples and a relatively low temperature quenching. These properties make them an attractive candidate for production of Si based light emitting diodes (LEDs). The low energy part of DRL in the vicinity of the D1 line is the most promising from this point of view due to its highest temperature stability and best coupling to fiber optics. Actually this part of DRL can be divided into several bands. One of them with a position 807 meV is known as D1 line. The substantial effect on D1 luminescence has oxygen. The line becomes broader and several subbands can be identified on the low and high energy side after prolonged annealing of deformed samples. Depending on particular treatment some of these bands could be even more intensive than the original D1 line. The strongest effect is usually observed in oxygen rich CZ crystals. In all cases the presence of dislocations is necessary for the appearance of the low energy bands. Several observations clearly show that the corresponding recombination centres include the dislocation related defect as well as some oxygen complexes. It implies that inclusion and mutual configuration of constituents defines the energy of optical transitions in the region of D1 band. In the present paper a review of previous investigations as well as new results regarding oxygen dislocations interaction are presented.

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“…Processes of accumulation of impurities to dislocations resulting in static aging and locking them are studied experimentally [5][6][7]. Dynamic aspects of interaction between impurity subsystem and dislocations are less investigated (see, as an exception, [8]). …”

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confidence: 99%

Hardening of semiconductor crystals caused by the dynamic aging of dislocations

Petukhov

2005

phys. stat. sol. (c)

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A model relating the pronounced effect of impurities on the processes of plastic deformation of semiconductor crystals to the dynamic aging of dislocations is proposed. The impurity contribution to the macroscopic flow stress that is established beyond the yield point is calculated by averaging over the ensemble of dislocations of different age. The concentration dependence of the impurity contribution to the hardening of semiconductors is predicted. The theory is illustrated by the experimental data for a GeSi solid solution.1 Introduction Strong effect of impurities on dislocation motion in semiconductors allows to control properties of microelectronic devices and attracts much attention [1][2][3]. There are important achievements in modeling the energetics of impurity atoms-dislocation interaction (see, for example, [4]). Processes of accumulation of impurities to dislocations resulting in static aging and locking them are studied experimentally [5][6][7]. Dynamic aspects of interaction between impurity subsystem and dislocations are less investigated (see, as an exception, [8]).As a rule, the magnitude of solid-solution hardening far exceeds the values expected from the meanfield estimates. The latter are obtained by interpolation between the values of the yield stress for the materials formed by each sort of atoms of which the solid solution is composed. One of the goals of the theory is the search for mechanisms underlying the enhanced effect of impurities on the plasticity of crystalline materials. In this paper, we discuss one such mechanism related to the so-called dynamic aging of dislocations. Experimental data on static aging [5][6][7] demonstrate that dislocations can be considered as sinks for mobile impurities. In addition, the dislocation moving through the crystal can trap in its core and entrain into motion even impurities with low mobility. As a result, the dynamic properties of the dislocations themselves change drastically until the dislocations become completely immobile.Immobilization of dislocations due to the dynamic aging put them out of the deformation process. To maintain the plastic flow the substitution them by fresh ones is required. Therefore, to model the process adequately one should consider behavior of a currently self-reproducing dislocation ensemble. The evolution of dislocation ensembles in many pure crystalline materials with a pronounced temperature dependence of the yield stress (semiconductors, alkali halide crystals, etc.) is described satisfactorily by the well-known Johnston-Gilman [9] and Alexander-Haasen [10,11] theories. Unfortunately, the corresponding theory for materials with impurities and solid solutions is far from well elaborated. We should mention [12], where the Alexander-Haasen model is supplemented by a numerical solution of the equation describing the diffusion of oxygen atoms in silicon toward moving dislocations. In present study, we

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The effect of thermal treatment on the electrical activity and mobility of dislocations in Si

Cited by 46 publications

References 20 publications

Oxygen Effect on Electrical and Optical Properties of Dislocations in Silicon

Oxygen Effect on Electrical and Optical Properties of Dislocations in Silicon

Influence of oxygen on the dislocation related luminescence centers in silicon

Hardening of semiconductor crystals caused by the dynamic aging of dislocations

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