The origins and characteristics of negative capacitance in metal–insulator–metal devices

Beale, Marc; MacKay, Peter E.

doi:10.1080/13642819208223046

“…1. [17][18][19][20][21][22] The negative capacitance effects have also been observed in the homojunction of GaAs infrared photo detectors, 23-25 alloys of Ga x Te 100−x , and hydrogenated amorphous Si diodes. The real part of the frequency dependent dielectric constant ͑Ј͒ of Cu 0.5 Tl 0.5 Ba 2 Ca 2 Cu 3−y Zn y O 10−␦ ͑y = 0, 1.0, 1.5, 2.0, 2.5͒ samples at room temperature ͑290 K͒ and close to liquid nitrogen temperature ͑79 K͒ are shown in Fig.…”

Section: Resultsmentioning

confidence: 90%

Frequency dependent dielectric properties of Cu0.5Tl0.5Ba2Ca2Cu3−yZnyO10−δ (y=, 1.0, 1.5,2.0, 2.5) superconductors

Khan

¹

,

Mumtaz

²

,

Khurram

³

2008

Journal of Applied Physics

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“…[25,26] Subsequently, NC has been reported in many electronic devices, such as bilayer capacitors, [91,92] p-n junctions, [27,28] Schottky diodes, [29,30] metal-insulator-metal (MIM) devices, [31] polycrystalline solar cells, [32] quantum devices, [33,34] and superlattices. Although the capacitance possesses many nontrivial properties, the most noticeable one is the NC effect.…”

Section: Negative Capacitancementioning

confidence: 99%

“…

such as steep subthreshold swing (SS), high switching ratio (I on /I off ), adjustable hysteresis, compatibility with standard semiconductor fabrication processes, and environmental friendliness, promotes NCFET to be a promising candidate to lower power consumption and solve the heat problem in ULSI.As early as the 1960s, the concept of negative capacitance (NC) was proposed in amorphous semiconductor chalcogenides thin film, [25,26] then the NC effect was observed in several devices, such as p-n junctions, [27,28] Schottky diodes, [29,30] metal-insulator-metal diodes, [31] and others. [32][33][34][35] Concretely, the NC effect occurs when the reciprocal of the second derivation of potential energy U with respect to the ferroelectric polarization charge Q F is negative, which is usually achieved during the switching process of ferroelectric polarization.

…”

mentioning

confidence: 99%

Ferroelectric Negative Capacitance Field Effect Transistor

Tu

¹

,

Wang

²

,

Wang

³

et al. 2018

Adv Elect Materials

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such as steep subthreshold swing (SS), high switching ratio (I on /I off ), adjustable hysteresis, compatibility with standard semiconductor fabrication processes, and environmental friendliness, promotes NCFET to be a promising candidate to lower power consumption and solve the heat problem in ULSI.As early as the 1960s, the concept of negative capacitance (NC) was proposed in amorphous semiconductor chalcogenides thin film, [25,26] then the NC effect was observed in several devices, such as p-n junctions, [27,28] Schottky diodes, [29,30] metal-insulator-metal diodes, [31] and others. [32][33][34][35] Concretely, the NC effect occurs when the reciprocal of the second derivation of potential energy U with respect to the ferroelectric polarization charge Q F is negative, which is usually achieved during the switching process of ferroelectric polarization. [36,37] NCFET achieves steep SS through the NC voltage amplification effect by adding a ferroelectric layer into the transistor gate stack. [22] NCFET simulation methods vary according to the types of transistor gate structures-metal ferroelectric semiconductor field-effect transistor (MFSFET), metal ferroelectric insulator semiconductor field-effect transistor (MFISFET), and metal ferroelectric metal insulator semiconductor field-effect transistor (MFMISFET). However, the basic principle is to realize a match between the channel charge Q and the ferroelectric polarization charge P, [38][39][40][41][42] no matter what the specific gate structure is.Furthermore, the influencing factors of NCFET's electrical properties have been qualitatively analyzed and summarized according to numerous simulation results. Commonly, a tradeoff exists between SS and hysteresis, [22] and we can design and manipulate the gate structure, [41] ferroelectric thickness (t Fe ), [22] ferroelectric material parameters, [38] silicon doping concentration, [39,43] temperature, [44] work frequency, [45][46][47][48] and high-κ dielectric [23,49,50] to optimize the electrical performance of NCFET and meet specific practical application requirement.The experimental researches on NCFETs can be mainly classified into three categories based on various kinds of ferroelectrics. First, the NCFET based on organic ferroelectric-poly(vinylidene difluoride-trifluoroethylene)[P(VDF-TrFE)], has been experimentally demonstrated, and achieves minimum SS (SS min ) = 13 mV dec −1 with small hysteresis. [51,52] Second, the NCFET based on lead zirconate titanate (PZT), a type of inorganic perovskite-type ferroelectric, exhibits hysteretic switching with With the progress in silicon circuit miniaturization, lowering power consumption becomes the major objective. Supply voltage scaling in ultralargescale integration (ULSI) is limited by the physical barrier termed "Boltzmann Tyranny." Moreover, considerable heat is inevitably generated from the ultrahighly integrated circuit. To solve these problems, a ferroelectric negative capacitance field-effect transistor (Fe-NCFET) is proposed in order to reduce the subthresho...

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“…The NC effects in the QWIP's have been predicted theoretically and confirmed experimentally [30]. The microscopic physical mechanism of NC has been associated with trapping processes, charge carriers capture and emission, space charge effect, contact injection or interface effects [23][24][25][26][27][30][31][32][33][34][35][36]. In our view point NC is most likely due to development of positive space charge of immobile ions of Cu 0.5 Tl 0.5 Ba 2 O 4Àd charge reservoir layer of CuTl-1234 samples in the neighborhood of the electrodes.…”

Section: Introductionmentioning

confidence: 94%