The Over-Reset Phenomenon in Ta₂O₅ RRAM Device Investigated by the RTN-Based Defect Probing Technique

Abstract

The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTNbased defect probing technique

Committee machines—a universal method to deal with non-idealities in memristor-based neural networks

“…All electrical tests for Ta 2 O 5 and aVMCO devices were done with a Keysight B1500A. The RTN data are extracted by switching the device into eight uniformly distributed resistance levels between 25 kΩ and 200 kΩ, and eight nearly uniformly distributed resistance levels between 1 MΩ and 7.5 MΩ with incremental RESET DC sweeps 30 for Ta 2 O 5 and aVMCO, respectively. RTN measurement is then carried out at each resistance level at a 0.1 V and 3 V read-out for Ta 2 O 5 and aVMCO respectively, with a sampling time of 2 ms/point and 10,000 sampling point per resistance level for an RTN measurement period of 20 s.…”

Impact of RTN on Pattern Recognition Accuracy of RRAM-Based Synaptic Neural Network

“…All electrical tests were done with a Keysight B1500A analyzer. Eight uniformly distributed resistance levels are obtained in both devices, between 25 kΩ and 200 kΩ for Ta 2 O 5 , and between 1 MΩ and 7.5 MΩ for aVMCO, by incrementing the reset voltages [18]. The read-out is at 0.1V and 3V for Ta 2 O 5 and aVMCO devices, respectively, averaged by five consecutive 20-ms read-out tests, followed by a 400-ms delay period.…”

Random Telegraph Noise in Metal‐Oxide Memristors for True Random Number Generators: A Materials Study

“…The most common types of atomic defects driving RTN current signals in metal/oxide memristors are: i) O vacancies or O ions, ii) metallic atoms from the electrodes that penetrate into the dielectric, iii) contaminant atoms from the environment, and iv) one cluster of one type or mixed types of defects. [ 13 ] Atomic defects enabling the observation of RTN can be formed due to the intrinsic variability of the manufacturing processes at the atomic scale (e.g., heavy‐ion implantation, surface contamination) [ 14 ] or after an electrical stress is applied (e.g., electrical‐field‐driven ionic movement). [ 15,16 ]…”