The passive-oxidized behavior of SiC particles and their jointing characteristics

In vitro cellular responses to silicon carbide particles manufactured through the Acheson process: Impact of physico-chemical features on pro-inflammatory and pro-oxidative effects

“…Oxidative thermal treatments led to surface modifications characterized by an increase of the silica layer thickness at 1400°C, as illustrated in Figure 6 (Deal and Grove, 1965;Filipuzzi, 1991;Shi et al, 2001;Das et al, 2004). At this temperature Fe 2+ is also converted into Fe 3+ .…”

Research Progress of Silicon carbide Powder Shaping Method

“…The principle of oxidation corrosion combined milling process [13] is firstly the oxidation treatment [14] for irregular local place of SiC particles, the silicon carbide particle edges are completely oxidized, producing silicon dioxide, then through ball milling shaping of silicon carbide, the oxide edges of silicon carbide particles after oxidation is grinded to remove. In the control of the shape of unshaped refractory additives silicon carbide powder, Shi Ce etal [15] using this method of processing silicon carbide powder shape,test through oxidation techniques at different temperatures and holding time,combined with the optimal milling parameters, test results show that the silicon carbide powder particle angularity at 1150℃was oxidized for 5h, and then use the difference in hardness of SiO 2 and SiC under optimum milling process parameters to mill, obtaining silicon carbide powder of the optimal length and sphericity.…”

Effect of Gradient TiC–Ti5Si3–TiSi2 barrier layer on SiC in SiC–borosilicate glass composites

“…When these values were plugged into Eqs. (11) and (12), the value of λ c could be calculated. The relevant thermal conductivities were shown in Table 3.…”

“…According to the researches of Yang [9], Vaughn [10] and Shi [11], SiC only becomes distinctly oxidized when it is heated at a temperature higher than 1600°C or heated in a low oxygen pressure environment. However, in the SiC-borosilicate glass SiC was seriously oxidized at temperatures lower than 850°C.…”