The performance of spinel bulk-like oxygen-deficient CoGa 2 O 4 as an air-cathode catalyst in microbial fuel cell

Liu, Di; Mo, Xiaoping; Li, Kexun; Liu, Yi; Wang, Junjie; Yang, Tingting

doi:10.1016/j.jpowsour.2017.05.080

Cited by 36 publications

(19 citation statements)

References 60 publications

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“…All the magnetic measurements were performed by a Quantum Design superconducting quantum interference device based on magnetic property measurement system (SQUID-MPMS 3). The observed energy peaks of Ga 2p 1/2 and Ga 2p 3/2 are located at 1144.5 eV and 1117.7 eV respectively [21,22]. In the case of Fig.…”

Section: Methodsmentioning

confidence: 68%

Observation of spin glass behavior in spinel compound CoGa2O4

Kan

et al. 2021

J Mater Sci: Mater Electron

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In this work, the synthesis process, crystal-structure, and comprehensive physical properties of spinel compound CoGa 2 O 4 have been investigated. The competition between antiferromagnetism (AFM) and ferromagnetism (FM) are considered to be the crucial elements for resulting in spin-glass (SG) behavior due to magnetic frustration. The observed SG behavior is determined by the temperature dependence of magnetization M(T) curves under the ZFC (zero-eld-cooled) and FCC ( eld-cooled) processes, where form the intense irreversibility divergence. Moreover, the corresponding tting parameters (the freezing temperature T 0 = 9.32 K, the ipping time τ 0 = 4.49 × 10 -10 s, and the dynamical exponent zν = 4.46) strongly indicate the existence of the SG behavior. Meanwhile, as another speci c characteristic for SG, in our present work, frequency (f) and magnetic eld (H) have a strong in uence on the peaks of AC susceptibility. From where, with the increase of f and H, the freezing temperature follows a corresponding peak shift. All the above phenomena and relevant analyses of magnetic frustration behavior con rm the typical SG behavior in CoGa 2 O 4 system.

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Section: Methodsmentioning

confidence: 68%

Observation of spin glass behavior in spinel compound CoGa2O4

Kan

et al. 2021

J Mater Sci: Mater Electron

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“…In the Ga 2p XPS spectrum, the presence of two major peaks at 1117.65 and 1144.43 eV, with the splitting energy of 26.78 eV, describ Ga 2p 3/2 and Ga 2p 1/2 , respectively (Figure b) . Furthermore, the Ga 3d XPS illustrates two peaks at 19.67 and 21.94 eV related to Ga 3d 5/2 and Ga 3d 3/2 , respectively . The O 1s XPS was separated into three peaks marked as O1, O2, and O3 which can be attributed to metal–O bonds, OH groups, and adsorbed H 2 O (Figure c) …”

Section: Results and Discussionmentioning

confidence: 95%

High-Performance Energy Storage Device Based on Triple-Shelled Cobalt Gallium Oxide Hollow Spheres and Graphene Wrapped Copper Iron Disulfide Porous Spheres

Zardkhoshoui

Davarani

Ashtiani

et al. 2019

ACS Sustainable Chem. Eng.

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Demanding more reliable power sources causes a huge development of modern electronic and optoelectronic devices with a high energy density (ENDE) and exceptional durability. Accordingly, designing modern electrode materials with outstanding structures can improve the construction of a new generation of electronic devices. Transition metal oxides hollow structures (TMOHS) have received considerable attention as appropriate materials for supercapacitors due to their structural properties and electrochemical performances. As a fascinating TMOHS, we make a new highly porous triple-shelled cobalt gallium oxide (CoGa2O4) hollow spheres (HTS-CGOHS) with triple narrow shells, and pseudocapacitive graphene wrapped CuFeS2 hollow spheres (GW@CFSHS) as developed positive and negative electrodes, respectively, in an energy storage device. The HTS-CGOHS electrode shows specific capacitance (SpCa) of 1724.30 F g–1 (239.5 mAh g–1) at 1 A g–1 which maintains as high as 1198.40 F g–1 (166.44 mAh g–1) at 24 A g–1, and reasonable durableness (96.80% capacity retention at 12 A g–1) owing to the low internal resistance, fast kinetics, reversibility, high surface area (104.30 m2 g–1), and numerous active sites. Moreover, the GW@CFSHS advanced negative electrode reveals electrochemical performance comprising a SpCa of 621.20 F g–1 (172.6 mAh g–1), rate performance of 58% and excellent durableness, which are superior to that of CuFeS2 hollow sphere (CFSHS) electrode. According to the electrochemical nature of the as-obtained pseudocapacitive electrode materials, an energy storage device (ESD) based on the HTS-CGOHS as a cathode and GW@CFSHS as an anode was studied. The HTS-CGOHS//GW@CFSHS device shows SpCa of 376.40 F g–1 (153.1 mAh g–1), high ENDE of 114.8 W h kg–1, and notable durableness (only 6.3% decrease after 5000 cycles at 6 A g–1).

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“…7c 51 , with an energy separation of 26.9 eV which matched the previously reported value well. 51,54,55 The Ga-3d scan shown in Fig. 7d exhibits a peak at around 20.08 eV corresponding to Ga-3d 5/2 .…”

Section: Xps Analysismentioning

confidence: 99%

Influence of Ga₂O₃, CuGa₂O₄ and Cu₄O₃ phases on the sodium-ion storage behaviour of CuO and its gallium composites

2020

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The performance of spinel bulk-like oxygen-deficient CoGa 2 O 4 as an air-cathode catalyst in microbial fuel cell

Cited by 36 publications

References 60 publications

Observation of spin glass behavior in spinel compound CoGa2O4

Observation of spin glass behavior in spinel compound CoGa2O4

High-Performance Energy Storage Device Based on Triple-Shelled Cobalt Gallium Oxide Hollow Spheres and Graphene Wrapped Copper Iron Disulfide Porous Spheres

Influence of Ga₂O₃, CuGa₂O₄ and Cu₄O₃ phases on the sodium-ion storage behaviour of CuO and its gallium composites

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The performance of spinel bulk-like oxygen-deficient CoGa 2 O 4 as an air-cathode catalyst in microbial fuel cell

Cited by 36 publications

References 60 publications

Observation of spin glass behavior in spinel compound CoGa2O4

Observation of spin glass behavior in spinel compound CoGa2O4

High-Performance Energy Storage Device Based on Triple-Shelled Cobalt Gallium Oxide Hollow Spheres and Graphene Wrapped Copper Iron Disulfide Porous Spheres

Influence of Ga2O3, CuGa2O4 and Cu4O3 phases on the sodium-ion storage behaviour of CuO and its gallium composites

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Influence of Ga₂O₃, CuGa₂O₄ and Cu₄O₃ phases on the sodium-ion storage behaviour of CuO and its gallium composites