The Phenomenon of Intensification (by Several Orders of Magnitude) Defects’ Manifestation in the Multiple-Scattering Pattern and Its Dispersive Nature

Lizunov, V. V.; Molodkin, V. B.; Lizunova, S. V.; Tolmachyov, M. G.; Skakunova, O. S.; Dmitriev, S. P.; Sheludchenko, B. V.; Brovchuk, S. M.; Skapa, L. M.; Lekhnyak, R. V.; Fuzik, K. V.

doi:10.15407/mfint.36.07.0857

Cited by 13 publications

(4 citation statements)

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“…In this article, we develop, optimize and prepare for practical application new improved possibilities of the proposed in [10,11] phase-variation approaches to the nondestructive structure diagnostics of multiparametrical systems. The experiments were carried out using the Panalytical Philips X'Pert PRO diffractometer (V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine) for Si single crystals.…”

Section: Experimental Results and Their Analysesmentioning

confidence: 99%

“…In addition, the parameters of defects were determined: concentration c and average radius R of dislocation loops, the thickness of the absorbing sublayer of DSL t am , the parameter k describing the degree of deformation of the kinematically scattering sublayer of DSL, and the thickness of this sublayer, which was in proportion to k. Also, the profile of 'large' RDDL distribution over the sample depth was ascertained. These results were obtained due to proposed in [10,11] phase-variation conception requiring realization of these variations under the experimental conditions, which ensures the main contribution to the intensities sequentially for each type of defects. Thereby, the contribution from defects of the certain type should exceed the total contribution from other types of defects or be simply the maximum possible.…”

Section: Introductionmentioning

confidence: 95%

“…The rapidity of diagnostics of monocrystalline systems can be increased using the methods of dynamical diffractometry. For example, in [10,11] it was shown that the dispersion mechanism of the sensitivity inherent to the dynamical scattering patterns to structural imperfections also provides the appearance of sensitivity to structural imperfections of their individual integral characteristics. The measurement of dependences of the total integrated intensity of dynamical diffraction (TIIDD) on smoothly varying diffraction conditions for the selected combinations of fixed values of the parameters for remaining experimental conditions with the subsequent joint processing of the results enables to quantitatively determine defect structure characteristics of single crystals [12].…”

Section: Introductionmentioning

confidence: 99%

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2021

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Fundamental new features and physical nature of possibilities for purposeful influence of interrelated variations in different experimental conditions on changes of the selectivity of sensitivity of azimuthal dependence of the total integrated intensity dynamical diffraction to various types of defects in single crystals have been determined. As a result, the efficiency of the previously developed phase-variation principles of diagnostics has been improved. The proposed approach enabled us to demonstrate the presence of additional types of defects in the single crystals under study and to determine the defects parameters (sizes and concentrations). It makes it possible to obtain additional sensitivity and informativeness for phase-variation structure multiparametrical non-destructive diagnostics of monocrystalline systems with defects of various types.

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Section: Experimental Results and Their Analysesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

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2021

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“…A number of papers demonstrate the possibility of a significant increase in the sensitivity of the diagnostic via dynamical diffraction in comparison with the traditional (kinematic) methods. This is an attribute of the recently revealed dispersed mechanism of manifestation of the structural imperfections in the scattering pattern.…”

Section: Introductionmentioning

confidence: 99%

Defect‐Pattern‐Induced Fingerprints in the Electron Density of States of Strained Graphene Layers: Diffraction and Simulation Methods

Radchenko

Tatarenko

Lizunov

et al. 2019

Physica Status Solidi (b)

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The paper combines two theoretical approaches – the method of grazing dynamical diffraction (which allows performing the nondestructive structural diagnostics of defects in the near‐surface layers) with efficient numerical simulation method (which enables computation of electron structure in realistically large systems with millions of atoms) – for studying electronic properties in uniaxially strained graphene layers with point defects: impurity atoms. Electron density of states (DOS) is proved sensitive to the direction of uniaxial tensile deformation and configuration of defects. If defects are distributed orderly, the band gap value (estimated from the DOS curves) varies nonmonotonically versus the stretching deformation along zigzag‐edge direction. In this case, the minimal tensile strain required for the band gap opening is found to be smaller than that for defect‐free graphene, and the maximum band gap value is close to that predicted for failure limit of the defect‐free graphene. The obtained results play a significant part for band gap engineering in graphene: via spatial configuring of defects and external tensile stresses.

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