A strict dynamical theory of radiation scattering in defect crystals is developed involving no arbitrary assumptions. Final theoretical expressions are obtained for the case of Laue‐diffraction in monocrystals containing homogeneously distributed defects, in particular Coulomb‐like defects (clusters, dislocation loops). The theory gives an unified description of the thickness dependences of intensity scattering both, for thin and thick crystals, and predicts an effect of anomalous transmission of diffuse background in thick crystals. Experimental investigations on O‐ or Cu‐doped Si‐monocrystals are carried out which confirms the theory.

Analytical expressions for coherent and diffuse scattering intensities with account for imperfections in all the crystals of double‐ and triple‐crystal diffractometers (DCD and TCD) have been derived from the generalized dynamical theory of X‐ray scattering in real single crystals which contain microdefects of various types. The analysis of TCD and DCD profiles measured from Czochralski‐grown silicon single crystal with oxygen precipitates and dislocation loops has been carried out. Characteristics of defect structures in sample and monochromator have been determined by using the combined DCD+TCD method. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Оттиски доступны непосредственно от издателя Фотокопирование разрешено только в соответствии с лицензией 2014 ИМФ (Институт металлофизики им. Г. В. Курдюмова НАН Украины) Напечатано в Украине.

The analytical expressions for the coherent and diffuse components of the integrated reflection coefficient are considered in the case of asymmetric Bragg diffraction geometry for a single crystal of arbitrary thickness, which contains randomly distributed Coulomb-type defects. The possibility to choose the combinations of diffraction conditions optimal for characterizing defects of several types by accounting for dynamical effects in the integrated coherent and diffuse scattering intensities, i.e. primary extinction and anomalous absorption, has been analysed based on the statistical dynamical theory of X-ray diffraction by imperfect crystals. The measured integrated reflectivity dependencies of the imperfect silicon crystal on azimuthal angle were fitted to determine the diffraction parameters characterizing defects in the sample using the proposed formulas in semi-dynamical and semi-kinematical approaches.