The photoluminescence characterization of the N-doped ZnO films produced by wet chemical deposition

Abstract

The ZnO:N films are prepared by a wet chemical method. The temperature-dependent photoluminescence (PL) is used to investigate those ZnO: N films. Due to the introduction of nitrogen atoms into ZnO film, another phase appears in the ZnO film, which can release the stress and improve the film quality. As a result, a neutral donor-bound exciton (D 0 X) emission peak is shown in low temperature PL spectrum. With the increasing temperature, the D 0 X line gradually loses its intensity and shifts to 3.30 eV, which is consistent with the well-known conversion from bound exciton to free exciton at elevated temperatures. Then, due to the thermal quenching effect, the D 0 X line vanishes in room temperature. In addition, no shift is shown in the location of visible band emission and only the intensity decreases with the increasing temperature.