The physics of Schottky barriers

Abstract

A review is given of the physical processes which determine the height of the barrier and the current-voltage relationship in a metal-semiconductor Schottky barrier.

Fabrication and characterization of Pd/Cu doped ZnO/Si and Ni/Cu doped ZnO/Si Schottky diodes

“…In order to use Cu doped ZnO thin films for optoelectronics and spintronics application, it is essential to realize good contact, both rectifying and ohmic. Rectifying or Schottky contacts are metal contact made upon a semiconductor such that it exhibits rectification behavior like a p-n junction [15].…”

Emittance of a photocathode: Effects of temperature and field

“…Doped semiconductors experience, like metals, an image charge potential modified barrier [12][13][14] in which the image charge term Q is multiplied by a factor ðK s À 1Þ=ðK s þ 1Þ, where K s is the static dielectric constant (e.g., for K s ¼ 5, the factor is 2=3 and the Schottky lowering factor therefore ffiffiffiffiffiffiffiffi 2=3 p of what it would be for a metal). If semiconductors are not sufficiently doped, then the effects on image charge and band bending are of greater complexity-the image charge appearing, for example, more triangular.…”

Electronic Properties of InP(100)-(1×1)-S Surface

“…Both the barrier height and ideality factor were improved. The available data on work functions of Au are scattered from 4.70 eV [16], 4.82 eV [17] to 5.1 eV [18]. But if we accept 4.87eV as an average value for the work function of Au, and 4.40 eV as the electron affinity of InP [171, the Schottky model predicts qb = 0.47 eV and n= 1 for an ideal Au/n-InP diode.…”