The piezoelectronic transistor: A nanoactuator-based post-CMOS digital switch with high speed and low power

Abstract

Abstract

In-situ observation of ultrafast 90° domain switching under application of an electric field in (100)/(001)-oriented tetragonal epitaxial Pb(Zr0.4Ti0.6)O3 thin films

“…That is domain switching from a -domain to c -domain dominates the total piezoelectric response. Our observation of fast 90° domain switching opens up exciting new possibilities for ultrafast electromechanical switches and sensors that including piezoelectric transistor applications that rely on 90° domain wall motion 27 .…”

Simultaneous dynamic electrical and structural measurements of functional materials

“…9), which links together strain at several lengths scales from nm (interferometry) to fm (diffraction) as well as time scales from 0.01 Hz to presently 55 Hz, allows new insights to be gleaned on the correlation between induced strain and material properties-information of crucial importance for the development of novel devices such as IBM's patented piezoelectric effect transistor. 17,30 Since the origin of the extraordinarily large electromechanical coupling and piezoelectric coefficients within 0.68PMN-0.32PT at the morphotropic phase boundary is not yet adequately explained in the literature, the ability to tune the piezoelectric response through domain engineering (with different orientations of crystal cuts, poling and/or direction of working electrodes) offers a variety of geometries that may be investigated within the novel experimental development on the XMaS beamline. The incident angle and the energy tunability that a synchrotron beamline offers allow the investigation of samples as function of x-ray penetration depth together with elemental sensitivity/selectivity.…”

“…17 In order to support the exploitation of this transformative technology and since most of the devices operate and are controlled through application of an electric field, it is crucial to investigate the physical deformation and strain state of these inherently non-linear hysteretic materials occurring under applied electric fields, that is, in situ and in operando. The strain properties at device level can be connected to the atomic origins of strain by combining interferometric global strain measurements and x-ray diffraction (XRD).…”

Frontiers in strain-engineered multifunctional ferroic materials

“…In this regard, many device concepts have been explored including piezoelectronic transistors which operate by using a piezoelectric layer to drive a metal-insulator transition in a piezoresistive material [ Fig. 7(a)], [135,136] magnetic or ferroelectric tunnel junctions where the polarization direction alters the tunneling electroresistance enabling the formation of non-volatile memories with large on/off ratios [ Fig. 7(b)], [137][138][139][140] (potentially) field effect transistors with negative capacitance that could allow for ultra-low-power electronic devices, [130,141] and others.…”